在解析热分析理论的基础上, 建立了平板Nd∶LuVO4激光晶体在激光二极管阵列侧面抽运时的导热微分方程。通过对方程的求解, 得到了Nd∶LuVO4晶体内部温度场解析式, 热形变场分布、温度场和热形变场的数值模拟表明, 当抽运光功率为40 W, 抽运区域为1 mm×4 mm时, 晶体在x方向的最高相对温升为11.63 K, y和z方向的最高温升为11.00 K；在x, y, z三方向上的热形变量分别为0.050 μm, 0.034 μm和0.48 μm。 这一结果可为Nd∶LuVO4激光器设计提供理论支持。

Based on the theory of thermal analysis, heat conduction equation of Nd∶LuVO4 crystal slab side-pumped by diode laser arrays is built. By solving the heat conduction equation, the analytic expression of temperature field and thermal deformation distribution is obtained. When geometry of pumping diodes corresponds to 1 mm×4 mm, and the power is about 40 W, temperature and heat deformation field of numerical simulation results show that the maximum temperature rise of 11.63 K along x, and 11.00 K along y and z direction, respectively, and total thermal deformations are 0.050 μm, 0.034 μm and 0.48 μm along x, y and z direction, respectively. This work will supply the theory for design of Nd∶LuVO4 laser.