[1] RADISIC V,LEONG K M K H,MEI X,et al.. Power amplification at 0.65 THz Using InP HEMTs［J］. IEEE Transactions on Microwave Theory and Techniques,2012,60(3): 724-729.

[2] LEONG K M K H,MEI X,YOSHIDA W,et al.. A 0.85 THz low noise amplifier using InP HEMT transistors［J］. IEEE Microwave and Wireless Components Letters,2015,25(6): 397-399.

[3] KOHLER R,TREDICUCCI A,BELTRAM F,et al.. Terahertz semiconductor-heterostructure laser［J］. Nature,2002,417(6885): 156-159.

[4] WILLIAMS B S,KUMAR S,HU Q,et al.. High-power terahertz quantum-cascade lasers［J］. Electronics Letters,2006,42(2): 89-91.

[5] LI L H,CHEN L,ZHU J X,et al.. Terahertz quantum cascade lasers with ＞1 W output powers［J］. Electronics Letters,2014,50(4): 309-310.

[6] ALLEN S J,TSUI D C,LOGAN R A. Observation of the two-dimensional plasmon in silicon inversion layers［J］. Physical Review Letters,1977,38(17): 980-983.

[7] GORNIK E,TSUI D C. Voltage-tunable far-infrared emission from Si inversion layers［J］. Physical Review Letters,1976,37(21): 1425-1428.

[8] HPFEL R A,VASS E,GORNIK E. Thermal excitation of two-dimensional plasma oscillations［J］. Physical Review Letters,1982,49(22): 1667-1671.

[9] HIRAKAWA K,YAMANAKA K,GRAYSON M,et al.. Far-infrared emission-spectroscopy of hot 2-dimensional plasmons in Al0.3Ga0.7As/GaAs heterojunctions［J］. Applied Physics Letters,1995,67(16): 2326-2328.

[10] KEMPA K,BAKSHI P,XIE H,et al.. Current-driven plasma instabilities in solid-state layered systems with a grating［J］. Physical Review B,1993,47(8): 4532-4536.

[11] MIKHAILOV S A. Plasma instability and amplification of electromagnetic waves in low-dimensional electron systems［J］. Physical Review B,1998,58(3): 1517-1532.

[12] DYAKONOV M,SHUR M. Shallow-water analogy for a ballistic field-effect transistor: new mechanism of plasma-wave generation by Dc current［J］. Physical Review Letters,1993,71(15): 2465-2468.

[13] BOUBANGA-TOMBET S,TEPPE F,TORRES J,et al.. Room temperature coherent and voltage tunable terahertz emission from nanometer-sized field effect transistors［J］. Applied Physics Letters,2010,97(26): 262108.

[14] LISAUSKAS A,PFEIFFER U,OJEFORS E,et al.. Rational design of high-responsivity detectors of terahertz radiation based on distributed self-mixing in silicon field-effect transistors［J］. J. Applied Physics,2009,105(11): 114511.

[15] KNAP W,DENG Y,RUMYANTSEV S,et al.. Resonant detection of subterahertz radiation by plasma waves in a submicron field-effect transistor［J］. Applied Physics Letters,2002,80(18): 3433-3435.

[16] KNAP W,KACHOROVSKII V,DENG Y,et al. Nonresonant detection of terahertz radiation in field effect transistors［J］. J. Applied Physics,2002,91(11): 9346-9353.

[17] DYAKONOV M I,SHUR M S. Plasma wave electronics: novel terahertz devices using two dimensional electron fluid［J］. IEEE Transactions on Electron Devices,1996,43(10): 1640-1645.

[18] ELKHATIB T A,KACHOROVSKII V Y,STILLMAN W J,et al. Terahertz response of field-effect transistors in saturation regime［J］. Applied Physics Letters,2011,98(24): 243505.

[19] GUTIN A,KACHOROVSKII V,MURAVIEV A,et al.. Plasmonic terahertz detector response at high intensities［J］. J. Applied Physics,2012,112(1): 014508.

[20] KNAP W,DYAKONOV M,COQUILLAT D,et al.. Field effect transistors for terahertz detection: physics and first imaging applications［J］. J. Infrared Millimeter and Terahertz Waves,2009,30(12): 1319-1337.

[21] KACHOROVSKII V Y,RUMYANTSEV S L,KNAP W,et al.. Performance limits for field effect transistors as terahertz detectors［J］. Applied Physics Letters,2013,102(22): 223505.

[22] SHUR M. Terahertz electronics for sensing applications［C］. Sensors,IEEE,Limerick,Ireland,2011: 40-43.

[23] PREU S,LU H,SHERWINM S,et al.. Detection of nanosecond-scale, high power THz pulses with a field effect transistor［J］. Review of Scientific Instruments, 2012,83(5): 053101.

[24] BUT D B,DREXLER C,SAKHNO M V,et al.. Nonlinear photoresponse of field effect transistors terahertz detectors at high irradiation intensities［J］. J. Applied Physics,2014,115(16): 164514.

[25] DYAKONOVA N,BUT D B,COQUILLAT D,et al.. AlGaN/GaN HEMT′s photoresponse to high intensity THz radiation［J］. Opto-Electronics Review,2015,23(3): 195-199.

[26] STILLMAN W J,SHUR M S. Closing the gap: plasma wave electronic terahertz detectors［J］. J. Nanoelectronics and Optoelectronics,2007,2(3): 209-221.

[27] LU J Q,SHUR M S,HESLER J L,et al.. Terahertz detector utilizing two-dimensional electronic fluid［J］. IEEE Electron Device Letters,1998,19(10): 373-375.

[28] WEIKLE R,LU J Q,SHUR M S,et al.. Detection of microwave radiation by electronic fluid in high electron mobility transistors［J］. Electronics Letters,1996,32(23): 2148-2149.

[29] KNAP W,DENG Y,RUMYANTSEV S,et al.. Resonant detection of subterahertz and terahertz radiation by plasma waves in submicron field-effect transistors［J］. Applied Physics Letters,2002,81(24): 4637-4639.

[30] KANG S,BURKE P J,PFEIFFER L N,et al.. Resonant frequency response of plasma wave detectors［J］. Applied Physics Letters,2006,89(21): 213512.

[31] EL FATIMY A,TEPPE F,DYAKONOVA N,et al.. Resonant and voltage-tunable terahertz detection in InGaAs/InP nanometer transistors［J］. Applied Physics Letters,2006,89(13): 131926.

[32] PERALTA X G,ALLEN S J,WANKE M C,et al.. Terahertz photoconductivity and plasmon modes in double-quantum-well field-effect transistors［J］. Applied Physics Letters,2002,81(9): 1627-1629.

[33] EL FATIMY A,TOMBET S B,TEPPE F,et al.. Terahertz detection by GaN/AlGaN transistors［J］. Electronics Letters,2006,2(23): 1342-1344.

[34] GOLENKOV A. Sub-THz nonresonant detection in AlGaN/GaN heterojunction FETs［J］. Semiconductor Physics,Quantum Electronics & Optoelectronics,2015,18(1): 40-45.

[35] LISAUSKAS A,BOPPEL S,SELIUTA D,et al.. Terahertz detection and coherent imaging from 0.2 to 4.3 THz with silicon CMOS field-effect transistors［C］. Microwave Symposium Digest(MTT),IEEE MTT-S International,Montreal,Canada,2012: 1-3.

[36] BOPPEL S,LISAUSKAS A,MAX A,et al.. CMOS detector arrays in a virtual 10-kilopixel camera for coherent terahertz real-time imaging［J］. Optics Letters,2012,37(4): 536-538.

[37] BOPPEL S,LISAUSKAS A,MUNDT M,et al.. CMOS integrated antenna-coupled field-effect transistors for the detection of radiation from 0.2 to 4.3 THz［J］. IEEE Transactions on Microwave Theory and Techniques,2012,60(12): 3834-3843.

[38] PERENZONI D,PERENZONI M,GONZO L,et al.. Analysis and design of a CMOS-based terahertz sensor and readout［C］. Proceedings of SPIE,Optical Sensing and Detection,Brussels,Belgium,2010,7726: 772618.

[39] BAUER M,VENCKEVICIUS R,KASALYNAS I,et al.. Antenna-coupled field-effect transistors for multi-spectral terahertz imaging up to 4.25 THz［J］. Optics Express,2014,22(16): 19250-19256.

[40] AL HADI R,SHERRY H,GRZYB J,et al.. A 1 k-Pixel Video Camera for 0.7-1.1 Terahertz Imaging Applications in 65-nm CMOS［J］. IEEE Journal of Solid-State Circuits,2012,47(12): 2999-3012.

[41] SHERRY H,AL HADI R,GRZYB J,et al.. Lens-integrated THz imaging arrays in 65nm CMOS technologies［C］. Radio Frequency Integrated Circuits Symposium(RFIC),IEEE,Baltimore,MD,USA,2011: 1-4.

[42] TOMADIN A,TREDICUCCI A,PELLEGRINI V,et al.. Photocurrent-based detection of terahertz radiation in graphene［J］. Applied Physics Letters,2013,103(21): 211120.

[43] OTSUJI T,TOMBET S A B,SATOU A,et al.. Graphene-based devices in terahertz science and technology［J］. J. Physics D: Applied Physics,2012,45(30): 303001.

[44] VICARELLI L,VITIELLO M S,COQUILLAT D,et al.. Graphene field-effect transistors as room-temperature terahertz detectors［J］. Nature Materials,2012,11(10): 865-871.

[45] YANG X X,SUN J D,QIN H,et al.. Room-temperature terahertz detection based on CVD graphene transistor［J］. Chinese Physics B,2015,24(4): 047206.

[46] ZAK A,ANDERSSON M A,BAUER M,et al.. Antenna-integrated 0.6 THz FET direct detectors based on CVD graphene［J］. Nano Letters,2014,14(10): 5834-5838.

[47] NAKAMURA S,MUKAI T,SENOH M. High-brightness InGaN/AlGaN double-heterostructure blue-green-light-emitting diodes［J］. J. Applied Physics,1994,76(12): 8189-8191.

[48] NAKAMURA S,SENOH N,IWASA N,et al.. High-brightness InGaN blue, green and yellow light-emitting diodes with quantum well structures［J］. Japanese J. Applied Physics,1995,34(7A): L797-L799.

[49] AMBACHER O. Growth and applications of Group III-nitrides［J］. J. Physics D: Applied Physics,1998,31(20): 2653-2710.

[50] QIN H,YU Y,LI X,et al.. Excitation of terahertz plasmon in two-dimensional electron gas［J］. Terahertz Science and Technology,2016,9(2): 71-81.

[51] TAN R B.Theoretical study on two-dimensional electron gas based terahertz device［D］. Beijing: University of Chinese Academy of Sciences 2013.(in Chinese)

[52] STERN F. Polarizability of a two-dimensional electron gas［J］. Physical Review Letters,1967,18(14): 546-548.

[53] CHAPLIK A V. Possible crystallization of charge carriers in low-density inversion layers［J］. Soviet J. Experimental and Theoretical Physics,1972,35(2): 395-398.

[54] SHUR M. Plasma wave terahertz electronics［J］. Electronics Letters,2010,46(26): S18-S21.

[55] SHANER E A,GRINE A D,WANKE M C,et al.. Far-infrared spectrum analysis using plasmon modes in a quantum-well transistor［J］. IEEE Photonics Technology Letters,2006,18(17-20): 1925-1927.

[56] SUN J D,SUN Y F,WU D M,et al. High-responsivity, low-noise, room-temperature, self-mixing terahertz detector realized using floating antennas on a GaN-based field-effect transistor［J］. Applied Physics Letters,2012,100(1): 013506.

[57] DYER G C,VINH N Q,ALLEN S J,et al.. A terahertz plasmon cavity detector［J］. Applied Physics Letters,2010,97(19): 193507.

[58] AIZIN G R,DYER G C. Transmission line theory of collective plasma excitations in periodic two-dimensional electron systems: Finite plasmonic crystals and Tamm states［J］. Physical Review B,2012,86(23): 235316.

[59] HUANG Y D.Manipulation of the interaction between two-dimensional plasma waves and terahertz electromagnetic waves［D］. Beijing: University of Chinese Academy of Sciences,2013.(in Chinese)

[60] SUN J D,QIN H,LEWIS R A,et al. Probing and modelling the localized self-mixing in a GaN/AlGaN field-effect terahertz detector［J］. Applied Physics Letters,2012,100(17): 173513.

[61] SUN J D,QIN H,LEWIS R A,et al.. The effect of symmetry on resonant and nonresonant photoresponses in a field-effect terahertz detector［J］. Applied Physics Letters,2015,106(3): 031119.

[62] TEPPE F,KNAP W,VEKSLER D,et al.. Room-temperature plasma waves resonant detection of sub-terahertz radiation by nanometer field-effect transistor［J］. Applied Physics Letters,2005,87(5): 052107.

[63] TEPPE F,VEKSLER D,KACHOROVSKI V Y,et al. Plasma wave resonant detection of femtosecond pulsed terahertz radiation by a nanometer field-effect transistor［J］. Applied Physics Letters,2005,87(2): 022102.

[64] SUN Y F,SUN J D,ZHOU Y,et al.. Room temperature GaN/AlGaN self-mixing terahertz detector enhanced by resonant antennas［J］. Applied Physics Letters,2011,98(25): 252103.

[65] LIU L,HESLER J L,XU H Y,et al.. A broadband quasi-optical terahertz detector utilizing a zero bias schottky diode［J］. IEEE Microwave and Wireless Components Letters,2010,20(9): 504-506.

[66] SEMENOV A D,RICHTER H,HUBERS H W,et al. Terahertz performance of integrated lens antennas with a hot-electron bolometer［J］. IEEE Transactions on Microwave Theory and Techniques,2007,55(2): 239-247.

[67] DYER G C,PREU S,AIZIN G R,et al.. Enhanced performance of resonant sub-terahertz detection in a plasmonic cavity［J］. Applied Physics Letters,2012,100(8): 083506.

[68] 李琦,胡佳琦,杨永发.太赫兹Gabor同轴数字全息二维再现像复原［J］.光学 精密工程,2014,22(8): 2188-2195.

    LI Q,HU J Q,YANG Y F. 2D reconstructed-image restoration of terahertz Gabor in-line digital holography［J］. Opt. Precision Eng.,2014,22(8): 2188-2195.(in Chinese)

[69] 田莉,金伟其,蔡毅,等.THz焦平面连续波透射成像系统的成像面积及对比度［J］.光学 精密工程,2015,23(8): 2164-2170.

    TIAN L,JIN W Q,CAI Y,et al.. Imaging area and contrast of THz focal plan array CW transmission imaging system［J］. Opt. Precision Eng.,2015,23(8): 2164-2170.(in Chinese)