[1] 冯琦, 周德云. 军用无人机发展趋势[J]. 电光与控制, 2003, 10(1): 9-13.(Feng Qi, Zhou Deyun. Military UAV development trends. Electronics Optics and Control, 2003, 10(1): 9-13)

[2] 刘尚合, 武占成. 静电放电及危害防护[M]. 北京: 北京邮电大学出版社, 2004.(Liu Shanghe, Wu Zhancheng. Electrostatic discharge and hazard protection. Beijing: Beijing University of Posts and Telecommunications Press, 2004)

[3] 陈亚洲, 程二威, 周星, 等. 无人机装备电磁环境效应与作用机理[M]. 北京: 国防工业出版社, 2017.(Chen Yazhou, Cheng Erwei, Zhou Xing, et al. Electromagnetic environment effects and mechanism for UAV equipments. Beijing: National Defense Industry Press, 2017)

[4] 朱长青, 刘尚合, 魏明, 等. 静电放电电流的频谱分析与计算[J]. 高电压技术, 2003, 29(8): 23-25.(Zhu Changqing, Liu Shanghe, Wei Ming, et al. An analysis and calculation on spectrum of ESD current. High Voltage Engineering, 2003, 29(8): 23-25)

[5] 刘尚合, 周万珍, 孙秋红. 静电放电电磁脉理论建模与作用机理研究进展[J]. 河北科技大学学报, 2005, 26(2): 87-92.(Liu Shanghe, Zhou Wanzhen, Sun Qiuhong. Modeling of electrostatic discharge electromagnetism impulse theory and the development of study of function mechanism. Journal of Hebei University of Science and Technology, 2005, 26(2): 87-92)

[6] 朱长青, 刘尚合, 魏明. ESD电流的解析表达式与数值解[J]. 高电压技术, 2005, 31(7): 22-24.(Zhu Changqing, Liu Shanghe, Wei Ming. Analytic expression and solution of ESD current. High Voltage Engineering, 2005, 31(7): 22-24)

[7] 盛松林, 田明宏, 刘尚合. 改进型偶极子模型的静电放电相关电场计算[J]. 高电压技术, 2002, 28(10): 8-10.(Sheng Songlin, Tian Minghong, Liu Shanghe. Electric fields calculation related to ESD based on improved dipole model. High Voltage Engineering, 2002, 28(10): 8-10)

[8] 毕增军, 刘尚合, 冯德玉. ESD辐射场数值建模与FDTD分析[J]. 高电压技术, 2003, 29(8): 26-28.(Bi Zengjun, Liu Shanghe, Feng Deyu. Numerical modeling and FDTD analysis of electromagnetic fields radiated by ESD. High Voltage Engineering, 2003, 29(8): 26-28)

[9] 毕增军, 刘尚合. ESD辐射场与带孔缝金属腔体耦合的数值研究[J]. 高电压技术, 2004, 30(1): 33-35.(Bi Zengjun, Liu Shanghe. Numerical study of coupling of ESD radiation fields to metallic cavity with apertures. High Voltage Engineering, 2004, 30(1): 33-35)

[10] 杜晓阳. CMOS射频集成电路片上ESD防护研究[D]. 杭州: 浙江大学, 2009: 15-23.(Du Xiaoyang. Investigation of on-chip ESD protection for RF CMOS integrated circuits. Hangzhou: Zhejiang University, 2009: 15-23.

[11] 鄢永明. 静电放电及其防护器件研究[D]. 长沙: 湖南大学, 2015: 11-24.(Yan Yongming. Research on electrostatic discharge and ESD protection devices. Changsha: Hunan University, 2015: 11-24)

[12] 柯逸辰. MOS集成电路ESD防护器件的研究[D]. 无锡: 江南大学, 2013: 33-43.(Ke Yichen. Investigation of ESD protection devices for MOS integrated circuits. Wuxi: Jiangnan University, 2013: 33-43)

[13] Chuang C H, Ker M D. System-level ESD protection for automotive electronics by co-design of TVS and CAN transceiver chips[J]. IEEE Trans Device and Materials Reliability, 2017, 17(3): 570-576.

[14] Chen Qi, Li Cheng, Lu Fei, et al. TLP measurement and analysis of graphene NEMS switches for on-chip ESD protection[C]//IEEE 12th International Conference on Nano/Micro Engineered and Molecular Systems. 2017: 370-374.

[15] IEC61000-4-2-2001. Electromagnetic compatibility(EMC) Part4: Testing and measurement techniques section 2: Electrostatic discharge immunity Test[S].

[16] Kai W, David P, Ramachandran C, et al. Numerical modeling of electrostatic discharge generators[J]. IEEE Trans Electromagnetic Compatibility, 2003, 45(5): 258-271.

[17] RFMD. Data sheet: RF1602 Broadband SPDT Switch[Z].

[18] Bobde M. Latch-up free vertical TVS diodes array structure using trench isolation[P]. USA, 7880229, 2011-01-02.

[19] 张希军, 原青云, 武占成. 聚合物ESD抑制器抑制特性的测试方法[J]. 高电压技术, 2007, 33(11): 108-111.(Zhang Xijun, Yuan Qingyun, Wu Zhancheng. Measurement on supressing characteristics of polymer ESD supressor. High Voltage Engineering, 2007, 33(11): 108-111)

[20] Infineon. Data sheet: Protection Device(TVS) ESD110-B1 Series[Z].

[21] Spartaco C, Francescaromana M. Circuit and numerical modeling of electrostatic discharge generators[J]. IEEE Trans Electromagnetic Compatibility, 2006, 42(6): 1350-1357.