Effects of Mg-doping concentration on the characteristics of InGaN based solar cells
LU Gang, WANG Bo, GE Yun-wang. Effects of Mg-doping concentration on the characteristics of InGaN based solar cells[J]. 光电子快报（英文版）, 2015, 11(5): 348.
[1] David A. and Grundmann M. J., Applied Physics Letters 97, 033501 (2010).
[2] Nanishi Y., Saito Y. and Yamaguchi T., Japanese Journal of Applied Physics 42, 2549 (2003).
[3] FU Yun-ying, DAI Li-ping, WANG Shu-ya and ZHANG Guo-jun, Optoelectronics Letters 9, 278 (2013).
[4] Liu J., Wu Z. C. and Kuang S. P., Optoelectronics and Advanced Materials-Rapid Communications 7, 343 (2013).
[5] Vos A. D., Endoreversible Thermodynamics of Solar Energy Conversion, Oxford: Oxford University Press, 90 (1992).
[6] Jani O., Ferguson I., Honsberg C. and Kurtz S., Applied Physics Letters 91, 132117 (2007).
[7] K. A. S. M. Ehteshamul Haque, Optoelectronics Letters 9, 177 (2013).
[8] Lai K. Y., Lin G. J., Lai Y. L., Chen Y. F. and He J. H., Applied Physics Letters 96, 081103 (2010).
[9] Jampana B. R., Melton A. G., Jamil M. N., Faleev N., Opila R. L., Ferguson I. T. and Honsberg C. B., IEEE Electron Device Letters 31, 32 (2010).
[10] Zeng S. W., Cai X. M. and Zhang B. P., IEEE Journal of Quantum Electronics 46, 783 (2010).
[11] Dahal R., Pantha B., Li J., Li J. Y. and Jiang H. X., Applied Physics Letters 98, 263504 (2011).
[12] Yang C. C., Sheu J. K., Liang X. W., Huang M. S., Lee M. L., Chang K. H., Tu S. J., Huang F. W. and Lai W. C., Applied Physics Letters 97, 021113 (2010).
[13] Farrell R. M., Neufeld C. J., Cruz S. C., Lang J. R., Iza M., Keller S., Nakamura S., DenBaars S. P., Mishra U. K. and Speck J. S., Applied Physics Letters 98, 201107 (2011).
[14] Dahal R., Li J., Aryal K., Lin J. Y. and Jiang H. X., Applied Physics Letters 97, 073115 (2010).
[15] Wu L. W., Chang S. J., Wen T. C., Su Y. K., Chen J. F., Lai W. C., Kuo C. H., Chen C. H. and Sheu J. K., IEEE Journal of Quantum Electronics 38, 446 (2002).
[16] Cao X. A., Stokes E. B., Sandvik P. M., LeBoeuf S. F., Kretchmer J. and Walker D., IEEE Electron Device Letters 23, 535 (2002).
[17] Lee Y. J., Lee M. H., Cheng C. M. and Yang C. H., Applied Physics Letters 98, 263504 (2011).
[18] Jani O., Ferguson I., Honsberg C. and Kurtz S., Applied Physics Letters 91, 132117 (2007).
[19] Wierer J. J., Koleske D. D. and Lee S. R., Applied Physics Letters 100, 111119 (2012).
[20] Sang L. W., Takeguchi M., Lee W., Nakayama Y., Lozach M., Sekiguchi T. and Sumiya M., Applied Physics Express 3, 111004 (2010).
[21] Kuwahara Y., Fujii T., Fujiyama Y., Sugiyama T., Iwaya M., Takeuchi T., Kamiyama S., Akasaki I. and Amano H., Applied Physics Express 3, 111001 (2010).
[22] Rimada J. C., Hernández L., Connolly J. P. and Barnham K. W. J., Microelectronics Journal 38, 513 (2007).
LU Gang, WANG Bo, GE Yun-wang. Effects of Mg-doping concentration on the characteristics of InGaN based solar cells[J]. 光电子快报（英文版）, 2015, 11(5): 348.
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