Increasing the hole energy by grading the alloy composition of the p-type electron blocking layer for very high-performance deep ultraviolet light-emitting diodes

Zi-Hui Zhang; Jianquan Kou; Sung-Wen Huang Chen; Hua Shao; Jiamang Che; Chunshuang Chu; Kangkai Tian; Yonghui Zhang; Wengang Bi; Hao-Chung Kuo

doi:doi:10.1364/prj.7.0000b1

Photonics Research, 2019, 7 (4): 040000B1, Published Online: Apr. 11, 2019

Increasing the hole energy by grading the alloy composition of the p-type electron blocking layer for very high-performance deep ultraviolet light-emitting diodes

Zi-Hui Zhang ^1,2Jianquan Kou ¹Sung-Wen Huang Chen ³Hua Shao ¹Jiamang Che ¹Chunshuang Chu ¹Kangkai Tian ¹Yonghui Zhang ¹Wengang Bi ¹Hao-Chung Kuo ^3,4,*

Author Affiliations

¹ Institute of Micro-Nano Photoelectron and Electromagnetic Technology Innovation, School of Electronics and Information Engineering, Hebei University of Technology, Key Laboratory of Electronic Materials and Devices of Tianjin, Tianjin 300401, China

² e-mail: zh.zhang@hebut.edu.cn

³ Department of Photonics and Institute of Electro-Optical Engineering, Taiwan Chiao Tung University, Hsinchu 30010, China

⁴ Department of Electrical Engineering and Computer Sciences and TBSI, University of California at Berkeley, Berkeley, California 94720, USA

Basic Information

DOI:	10.1364/prj.7.0000b1
中图分类号:	--
栏目:	Semiconductor UV Photonics
项目基金:	National Natural Science Foundation of China (NSFC)10.13039/501100001809 (51502074)、 Natural Science Foundation of Hebei Province10.13039/501100003787 (F2017202052)、 Natural Science Foundation of Tianjin City10.13039/501100006606 (16JCYBJC16200)、 Program for Top 100 Innovative Talents in Colleges and Universities of Hebei Province (SLRC2017032)、 Program for 100-Talent-Plan of Hebei Province (E2016100010).
收稿日期:	Dec. 12, 2018
修改稿日期:	--
网络出版日期:	Apr. 11, 2019
通讯作者:	Hao-Chung Kuo (hckuo@faculty.nctu.edu.tw)
备注:	--

Zi-Hui Zhang, Jianquan Kou, Sung-Wen Huang Chen, Hua Shao, Jiamang Che, Chunshuang Chu, Kangkai Tian, Yonghui Zhang, Wengang Bi, Hao-Chung Kuo. Increasing the hole energy by grading the alloy composition of the p-type electron blocking layer for very high-performance deep ultraviolet light-emitting diodes[J]. Photonics Research, 2019, 7(4): 040000B1.

Increasing the hole energy by grading the alloy composition of the p-type electron blocking layer for very high-performance deep ultraviolet light-emitting diodes

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