基于nBn结构的InAsSb器件具有扩散电流极限低、造价低廉、容易实现大面阵以及可兼容现有III-V族二极管电路等诸多优点，是小型化、低功耗、低成本、高分辨率中长波探测器的首选之一。在InAsSb材料的外延生长过程中，As的组分很难精确控制。为了找到允许的误差范围，研究了用分子束外延 （Molecular Beam Epitaxy, MBE）工艺生长InAsSb材料过程中As组分对材料表面形貌、晶格质量以及器件截止波长等方面的影响。试验结果表明，在保证材料外延厚度小于临界厚度的前提下，材料对压应力的容忍程度比拉应力高。将As组分控制在略小于91%的范围内，不但可以保证材料的质量，而且还能略微增大器件的响应波长。

The InAsSb device with nBn structure has many advantages, such as low diffusion current limit, low cost, easy realization of large array, compatibility with existing III-V diode circuit and so on. It is one of the first choices for medium and long wave miniaturized detector with low power consumption, low cost and high resolution detector. In the process of InAsSb epitaxial growth, it is difficult to accurately control the composition of As. In order to find the allowable error range, the influence of As component on the surface morphology, lattice quality and cut-off wavelength of InAsSb material is studied. The experimental results show that under the premise that the epitaxial thickness of the material is less than the critical thickness, the material has a higher tolerance for compressive stress than tensile stress. Controlling the As component within the range of slightly less than 91% can not only ensure the quality of the material, but also slightly increase the response wavelength of the device.