我们描述了一种高性能平面InGaAsP/InP单光子雪崩二极管（SPAD），该二极管具有单独的吸收、分级、电荷和倍增（SAGCM）异质结构。通过电场调节和缺陷控制，SPAD在293 K的门控模式下工作，光子探测效率（PDE）为70%，暗计数率（DCR）为14.93 kHz，后脉冲概率（APP）为0.89%。此外，在死区时间为200 ns的主动淬灭模式下工作时，室温下实现了12.49%的PDE和72.29 kHz的DCR。

We described a high-performance planar InGaAsP/InP single-photon avalanche diode (SPAD) with a separate absorption, grading, charge and multiplication (SAGCM) heterostructure. By electric field regulation and defects control, the SPAD operated in the gated-mode at 293 K with a photon detection efficiency (PDE) of 70%, a dark count rate (DCR) of 14.93 kHz and an after-pulse probability (APP) of 0.89%. Furthermore, when operated in the active quenching mode with a dead time of 200 ns, a PDE of 12.49% and a DCR of 72.29 kHz were achieved at room temperature.