在硅平面上设计了一种基于二氧化钒（VO2）超材料的可调谐太赫兹（THz）宽带吸收器，该吸收器由VO2谐振层和被SiO2介质隔开的金属反射层组成。数值仿真结果表明，具有高电导率（30000 S/m）的VO2表现为金属相，其吸收率大于90%时吸收带宽达到了2 THz，并且分别在4.5 THz和5.8 THz处实现了吸收率为99.3%和99.6%的完美吸收。具有低电导率（100 S/m）的VO2则表现为绝缘相，其在相应的宽频吸收带内的峰值吸收率仅为8%。因此，通过改变吸收器结构中VO2材料的电导率，可以实现宽频带内吸收率的动态调谐以及吸收和反射功能的切换。此外，由于结构的对称性，所提出的吸收器在垂直入射条件下具有偏振不敏感特性，并且在大入射角度范围内保持着良好的吸收性能。

In this paper， a vanadium dioxide （VO2） based tunable broadband terahertz （THz） absorber is designed on the silicon plane， which is composed of a VO2 resonator and a metal layer， separated by a thin silicon dioxide （SiO2） dielectric layer. Numerical simulation results show that VO2 with high conductivity （30000 S/m） is at its metal phase， and when its absorptivity is greater than 90%， the 2.0 THz absorption bandwidth can be obtained. In addition， the perfect absorption is realized with absorptivity of 99.3% and 99.6% at 4.5THz and 5.8THz， respectively. In contrast， VO2 with low conductivity （100 S/m） is at its insulation phase， and the peak absorptivity in the corresponding broad absorption band is only 8%. Therefore， by altering the conductivity of VO2 in the absorber， one can switch between absorption and reflection and realize the dynamic tuning of absorptivity in a broad frequency band. In addition， the proposed absorber is polarization-insensitive under vertical incidence due to its structural symmetry. Moreover， the absorber maintains an excellent absorption performance over a wide incident angle range.