Effect of n-type barrier doping on steady and dynamic performance of InGaN light-emitting diodes

CHEN Gui-chu; FAN Guang-han

doi:doi:10.1007/s11801-014-4033-7

光电子快报（英文版）, 2014, 10 (4): 250, Published Online: Jul. 13, 2020

Effect of n-type barrier doping on steady and dynamic performance of InGaN light-emitting diodes

CHEN Gui-chu ^1,2,*FAN Guang-han ²

Author Affiliations

¹ Department of Electronic Information, Zhao Qing University, Zhaoqing 526061, China

² Institute of Optoelectronic Material and Technology, South China Normal University,Guangzhou 510631, China

Basic Information

DOI:	10.1007/s11801-014-4033-7
中图分类号:	--
栏目:
项目基金:	This work has been supported by the National Natural Science Foundation of China (No.61176043).
收稿日期:	Mar. 10, 2014
修改稿日期:	--
网络出版日期:	Jul. 13, 2020
通讯作者:	CHEN Gui-chu (gchenbox@126.com)
备注:	--

CHEN Gui-chu, FAN Guang-han. Effect of n-type barrier doping on steady and dynamic performance of InGaN light-emitting diodes[J]. 光电子快报（英文版）, 2014, 10(4): 250.