半导体光子学与技术, 2003, 9 (4): 201, 网络出版: 2011-08-12  

1 400-1 500nm,Different Material-doped Raman Fiber Lasers Pumped by Nd∶YVO4 Laser

1 400-1 500nm,Different Material-doped Raman Fiber Lasers Pumped by Nd∶YVO4 Laser
作者单位
1 Dept. of Optoelectron., Huazhong University of Sci. & Technol., Wuhan 430074, CHN
2 Dept. of Inform. Eng., Airforce Radar Academy, Wuhan 430010, CHN
引用该论文

MEI Jin-jie, LIU De-ming, WANG Ying, HUANG De-xiu. 1 400-1 500nm,Different Material-doped Raman Fiber Lasers Pumped by Nd∶YVO4 Laser[J]. 半导体光子学与技术, 2003, 9(4): 201.

MEI Jin-jie, LIU De-ming, WANG Ying, HUANG De-xiu. 1 400-1 500nm,Different Material-doped Raman Fiber Lasers Pumped by Nd∶YVO4 Laser[J]. Semiconductor Photonics and Technology, 2003, 9(4): 201.

参考文献

[1] Emori T, Namili S. 100 nm bandwidth flat Raman amplifiers pumped and gain equalized by 12-wavelength-channel WDM high power laser diodes[A].Proc.Conf.Optical Fiber Communications[C]. San Diego,CA:IEEE,1999.PD19.

[2] Rottwitt K, Kidorf H D. A 92 nm bandwidth Raman amplifier [A]. Proc. Conf. Optical Fiber Communications[C].San Jose,CA:IEEE,1998.PD6.

[3] Galeener F L,Millelsen J C,Geils R H,et al.The relative Raman cross sections of vitreous SiO2,GeO2, B2O3and P2O5[J].Appl.Phys. Lett.,1978,32:34-36.

[4] Hansen P B,Eskildsen L,Stentz A J,et al.Rayleigh scattering limitations in distributed Raman pre-amplifiers[J].IEEE Photon.Technol.Lett.,1998,10:159-161.

[5] Aoki Y.Fiber Raman amplifier properties for applications to long-distance optical communications[J]. Optical and Quantum Electronics,1989,21:S89-S104.

[6] Rini M,Cristini I,Degiorgio V.Numerical modeling and optimization of cascaded CW Raman fiber lasers[J].J.Quant.Electron.,2000,36:1 117-1 122.

MEI Jin-jie, LIU De-ming, WANG Ying, HUANG De-xiu. 1 400-1 500nm,Different Material-doped Raman Fiber Lasers Pumped by Nd∶YVO4 Laser[J]. 半导体光子学与技术, 2003, 9(4): 201. MEI Jin-jie, LIU De-ming, WANG Ying, HUANG De-xiu. 1 400-1 500nm,Different Material-doped Raman Fiber Lasers Pumped by Nd∶YVO4 Laser[J]. Semiconductor Photonics and Technology, 2003, 9(4): 201.

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