[1] 刘诗涛,王立,伍菲菲,等. InGaN/GaN多量子阱LED载流子泄漏与温度关系研究 ［J］. 发光学报, 2017,38(1):63-69.

    LIU S T,WANG L,WU F F,et al.. Temperature-dependent carrier leakage in InGaN/GaN multiple quantum wells light-emitting diodes ［J］. Chin. J. Lumin., 2017,38(1):63-69. (in Chinese)

[2] HATTORI A N,HATTORI K,MORIWAKI Y,et al.. Enhancement of photoluminescence efficiency from GaN(0001) by surface treatments ［J］. Jpn. J. Appl. Phys., 2014,53(2):021001-1-5.

[3] 杨超普. MOCVD在线光致发光与红外测温研究 ［D］. 南昌:南昌大学, 2014.

    YANG C P. Research on MOCVD in situ Photoluminescence and On-line Infrared Thermometry ［D］. Nanchang:Nanchang University, 2014. (in Chinese)

[4] 张凯. InGaN/GaN多量子阱发光特性的研究 ［D］. 济南:山东大学, 2015.

    ZHANG K. Optical Investigation on InGaN/GaN Multiple Quantum Wells ［D］. Jinan:Shandong University, 2015. (in Chinese)

[5] LIU S T,QUAN Z J,WANG L. Carrier transport via V-shaped pits in InGaN/GaN MQW solar cells ［J］. Chin. Phys. B, 2017,26(3):038104-1-6.

[6] YANG C P,FANG W Q,MAO Q H,et al.. Photoluminescence study of blue light LED epitaxial wafer during growth by MOCVD ［J］. Optoelectron. Adv. Mater.—Rapid Commun., 2015,9(11-12):1575-1578.

[7] 王雪蓉,魏莉萍,郑会保,等. 利用光致发光法测定AlxGa1-xN外延膜中的铝元素含量 ［J］. 激光与光电子学进展, 2012,49(5):051601-1-5.

    WANG X R,WEI L P,ZHENG H B,et al.. Al contents of AlxGa1-xN epitaxial films studied by photoluminescence technique ［J］. Laser Optoelectron. Prog., 2012,49(5):051601-1-5. (in Chinese)

[8] 魏国华,王斌,李俊梅,等. In0.2Ga0.8As/GaAs单量子阱PL谱温度特性及其机制 ［J］. 发光学报, 2010,31(5):619-623.

    WEI G H,WANG B,LI J M,et al.. Temperature dependence of the photoluminescence properties and the research on the mechanism of In0.2Ga0.8As/GaAs single quantum well ［J］. Chin. J. Lumin., 2010,31(5):619-623. (in Chinese)

[9] 邢兵,曹文彧,杜为民. 不同In含量InGaN/GaN量子阱材料的变温PL谱 ［J］. 发光学报, 2010,31(6):864-869.

    XING B,CAO W Y,DU W M. Temperature-dependent PL of InGaN/GaN multiple quantum wells with variable content of In ［J］. Chin. J. Lumin., 2010,31(6):864-869. (in Chinese)

[10] LIN T,QIU Z R,YANG J R,et al.. Investigation of photoluminescence dynamics in InGaN/GaN multiple quantum wells ［J］. Mater. Lett., 2016,173:170-173.

[11] 王绘凝. InGaN/GaN多量子阱的结构及其光学特性的研究 ［D］. 济南:山东大学, 2014.

    WANG H N. Structure and Optical Investigation on InGaN/GaN Multiple Quantum Wells ［D］. Jinan:Shandong University, 2014. (in Chinese)

[12] 竹有章,傅关新,王红霞,等. HVPE生长GaN厚膜光致发光特性研究 ［J］. 激光与光电子学进展, 2011,48(9):093101-1-5.

    ZHU Y Z,FU G X,WANG H X,et al.. Luminescence of GaN thick film grown by HVPE ［J］. Laser Optoelectron. Prog., 2011,48(9):093101-1-5. (in Chinese)

[13] WANG Q,ZHU C R,ZHOU Y F,et al.. Fabrication and photoluminescence of strong phase-separated InGaN based nanopillar LEDs ［J］. Superlattices Microstruct., 2015,88:323-329.

[14] PRALL C,RUEBESAM M,WEBER C,et al.. Photoluminescence from GaN layers at high temperatures as a candidate for in situ monitoring in MOVPE ［J］. J. Cryst. Growth, 2014,397:24-28.