[1] BLOEMBERGEN N.Laser-induced electric breakdown in solids [J].EEE J Q E,1974,QE10(3):375～386.

[2] BLOEMBERGEN N.A brief history of light breakdown [J].J Nonlinear Optical Physics & Materials,1997,6(4):377～385.

[3] . Non-thermal melting in semiconductors measured at femtosecond resolution[J]. Nature, 2001, 410(6824): 65-67.

[4] LENZER M,KRUGER J,SARTANIA S et al.Femtosecond optical breakdown in dielectrics [J].Phys Rev Lett,1998,80(18):4076～4079.

[5] TIEN A C,BACKUS S,KAPTEYN H et al.Short-pulse laser damage in transparent materials as a function of pulse duration [J].Phys Rev Lett,1999,82(19):3883～3886.

[6] JASAPARA J,NAMPOOTHIRI A V V,RUDOLPH W.Femtosecond laser pulse induced breakdown in dielectric thin films [J].Phys Rev,2001,B63(4):045117-1～045117-5.

[7] SAUERBERV R,PETTIT G H.Theory for the etching of organic materials by ultraviolet pulses [J].A P L,1989,55(5):421～423.

[8] NIEMZ M H.Threshold dependence of laser-induced optical break-down on pulse duration [J].A P L,1995,66(10):1181～1183.

[9] BULGAKAVA N M,STOIAN R,ROSENFELD A et al.Electronictransport and consequences for material removal in ultrafast pulsed laser ablation of materials [J].Phys Rev,2004,B69(5):054102-1～054102-12.

[10] THORNBER K K.Application of scaling to problems in high-field electronic transport [J].J A P,1981,52(1):279～290.

[11] KELDYSH L V.Ionization in the field of a strong electromagnetic wave [J].Sov Phys JETP,1965,20(5):1307～1314.

[12] CARR C W,RADOUSKY H B,RUBENCHIK A M et al.Localized dynamics during laser-induced damage in optical materials [J].Phys Rev Lett,2004,92(8):087401-1～087401-4.

[13] DU D,LIU X,KORN G et al.Laser-induced breakdown by impact ionization in SiO2 with pulse width from 7ns to 150fs [J].A P L,1994,64(23):3071～3073.

[14] CARR C W,RADOUSKY H B,DEMOS S G.Wavelength dependence of laser induced damage:determining the damage initiation mechanisms [J].Phys Rev Lett,2001,91(12):127402-1～127402-4.