Large spot size and low-divergence angle operation of 917-nm edge-emitting semiconductor laser with an asymmetric waveguide structure 
Download： 827次
Jianxin Zhang, Lei Liu, Wei Chen, Anjin Liu, Wenjun Zhou, Wanhua Zheng. Large spot size and low-divergence angle operation of 917-nm edge-emitting semiconductor laser with an asymmetric waveguide structure[J]. Chinese Optics Letters, 2012, 10(6): 061401.
[1] T. Murakami, K. Ohtaki, H. Matsubara, T. Yamawaki, H. Saito, K. Isshiki, Y. Kokubo, A. Shima, H. Kumabe, and W. Susaki, IEEE J. Quantum Electron. QE-23, 712 (1987).
[2] A. Al-Muhanna, L. J. Mawst, D. Botez, D. Z. Garbuzov, R. U. Martinelli, and J. C. Connolly, Appl. Phys. Lett. 73, 1182 (1998).
[3] G. Lin, S. Yen, and C. Lee, IEEE Photon. Technol. Lett. 8, 1588 (1996).
[4] G. Yang, G. M. Smith, M. K. Davis, A. Kussmaul, D. A. S. Loeber, M. H. Hu, H.-K. Nguyen, C.-E. Zah, and R. Bhat, IEEE Photon. Technol. Lett. 16, 981 (2004).
[5] T. Temmyo and M. Sugo, Electron. Lett. 31, 642 (1995).
[6] H.Wenzel, F. Bugge, G. Erbert, R. Hulsewede, R. Staske, and G. Trankle, Electron. Lett. 37, 1024 (2001).
[7] M. C. Wu, Y. K. Chen, M. Hong, J. P. Mannaerts, M. A. Chin, and A. M. Sergent, Appl. Phys. Lett. 59, 1046 (1991).
[8] Y. C. Chen, R. G. Waters, and R. J. Dalby, Electron. Lett. 26, 1348 (1990).
[9] M. V. Maximov, Y. M. Shernyakov, I. I. Novikov, L. Y. Karachinsky, N. Y. Gordeev, U. Ben-Ami, D. Bortman-Arbiv, A. Sharon, V. A. Shchukin, and N. N. Ledentsov, IEEE J. Sel. Top. Quantum Electron. 14, 1113 (2008)
[10] B. S. Ryvkin and E. A. Avrutin, J. Appl. Phys. 97, 113106 (2005).
[11] B. S. Ryvkin and E. A. Avrutin, J. Appl. Phys. 97, 123103 (2005).
[12] B. S. Ryvkin and E. A. Avrutin, J. Appl. Phys. 98, 026107 (2005).
[13] B. S. Ryvkin and E. A. Avrutin, J. Appl. Phys. 105, 103107 (2009).
[14] K. C. Kim, Il Ki Han, Y. C. Yoo, Jung Il Lee,Y. M. Sung, and T. G. Kim, IEEE T. Nanotechnol 7, 135(2008)
[15] K. C. Kim, D.-K. Jang, Jung Il Lee, T. G. Kim, W. W. Lee, J. H. Kim, E. J. Yang, B. J. Koo, and Il Ki Han, IEEE Photon. Technol. Lett. 21, 1438 (2009).
[16] D. Botez, Appl. Phys. Lett. 74, 3102 (1999).
[17] M. Levy, Y. Karni, N. Rapaport, Y. Don, Y. Berk, D. Yanson, and S. Cohen, Proc. SPIE 7583, 75830J (2010).
[18] Z. Xu, W. Gao, L. Cheng, K. Luo, K. Shen, and A. Mastrovito, Proc. SPIE 6909, 69090Q (2008).
[19] B. Corbett, P. Lambkin, J. O'Callaghan, S. Deubert, W. Kaiser, J. P. Reithmaier, and A. Forche, IEEE Photon. Technol. Lett. 19, 916 (2007).
[20] Y. Cao, "Al-free High Power and High Brightness Diode Lasers" (in Chinese) PhD. Thesis (Institute of Semiconductor Chinese Academy of Sciences, 2006).
Jianxin Zhang, Lei Liu, Wei Chen, Anjin Liu, Wenjun Zhou, Wanhua Zheng. Large spot size and low-divergence angle operation of 917-nm edge-emitting semiconductor laser with an asymmetric waveguide structure[J]. Chinese Optics Letters, 2012, 10(6): 061401.
PDF全文
