Frontiers of Optoelectronics, 2016, 9 (2): 312, 网络出版: 2016-10-21   

Single crystal erbium compound nanowires as high gain material for on-chip light source applications

Single crystal erbium compound nanowires as high gain material for on-chip light source applications
作者单位
1 School of Electrical, Computer, and Energy Engineering, Arizona State University, Tempe, Arizona 85287, USA
2 Department of Electronic Engineering, Tsinghua University, Beijing 100084, China
基本信息
DOI: 10.1007/s12200-016-0620-5
中图分类号: --
栏目: RESEARCH ARTICLE
项目基金: This research was supported by the Project 985 of China and Tsinghua University Initiative Scientific Research Program (No. 20141081296). The work at ASU was supported by the NSF EAGER Grant.
收稿日期: 2016-02-03
修改稿日期: --
网络出版日期: 2016-10-21
通讯作者: Cun-Zheng NING (cning@asu.edu)
备注: --

Zhicheng LIU, Hao SUN, Leijun YIN, Yongzhuo LI, Jianxing ZHANG, Cun-Zheng NING. Single crystal erbium compound nanowires as high gain material for on-chip light source applications[J]. Frontiers of Optoelectronics, 2016, 9(2): 312. Zhicheng LIU, Hao SUN, Leijun YIN, Yongzhuo LI, Jianxing ZHANG, Cun-Zheng NING. Single crystal erbium compound nanowires as high gain material for on-chip light source applications[J]. Frontiers of Optoelectronics, 2016, 9(2): 312.

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