[1] Lambe J, McCarthy S L, Light emission from inelastic electron tunneling[J]. Phys.Rev.Lett., 1976, 37(14): 923-926.

[2] Dawson P, Walmsley D. The mechanism of light emission from statistically rough tunnel junctions[J]. Solid State Communications, 1984, 50(4): 383-388.

[3] Ushioda S, Uehara Y, Takada M, et al. Grating-coupled light emission from the slow mode of metal-insulator-metal tunnel junctions[J]. Jpn.J.Appl.Phys., 1992, 31(part2, 7A): L870-873.

[4] Cai Y M, Sun C X, Gao Z L. Metal-insulator-metal tunneling light-emission junction in surface acoustic wave field[J]. Jpn.J.Appl.Phys., 1994, 33(part2, 11B): L1 610-1 612.

[5] Wedge S, Barnes W L. Surface plasmon-polariton mediated light emission through thin metal films[J]. Optics Express, 2004, 12(16): 3 673-3 685.

[6] Neal T D, Okamoto K, Scherer A. Surface plasmon enhanced emission from dye doped polymer layers[J]. Optics Express, 2005, 13: 5 522-5 527.

[7] Okamoto K, Niki I, Shvartser A, et al. Surface plasmon enhanced light-emitters based on InGaN quantum wells[J]. Nature Materials, 2004, 3: 601-605.

[8] Szentirmay Z. Surface plasmon assisted electron-photon interaction in metal-oxide-metal layered structure[J]. Prog. Quant.Electr., 1991, 15(3): 175-230.

[9] Wang M X, Zhang Y W, Cheng H W, et al. Study on the relation between surface roughness and the light emission spectrum of an Au-Al2O3-Al tunnel junction[J]. Applied Surface Science, 2001, 173: 362-367.

[10] Wang M X, Yu J H, Sun C X. Light emission characteristics and negative resistance phenomenon of Si-based metal/insulator/semiconductor tunnel junction[J]. Applied Surface Science, 2000, 161: 9-13.