研制出具有20μm间隙的微带型Cr:GaAsps光电闸门.用锁模氩离子激光器同步泵浦的染料激光器照射,用上升时间30ps取样示波器监测,得到输出电脉冲120ps的上升时间和230ps的半极大全宽度(FWHM).在30V直流偏压下,38pJ～320pJ激光脉冲能量范围内,给出输出电脉冲峰压与光脉冲能量之间的线性关系实验曲线.

The development of a picosecond GaAs photoconduotive switch is reported. The switch consists of a miorostrip transmission line formed on Cr-doped semi-insulating GaAs with a small gap (-20μm) in the stripline. As the source of optical pulses used for preliminary evaluation of the switch, a synchronously pumped Rh6G dye laser was used. The rise time of the signal observed on a sampling oscilloscope was 120 ps and the FWHM was 230ps. We measured the dependence of peak voltage of the switched electric pulse on the energy of the incident laser pulse for a bias voltage of 30 V and incident energy range of 38~220 pJ.