[1] Bae C D, Kim D J, Moon S, et al. Aging dynamics of solution-processed amorphous oxide semiconductor field effect transistors ［J］. Appl. Mater. Inter., 2010, 2(3):626-632.

[2] Kim Y H, Han M K, Han J I, et al. Effect of metallic composition on electrical properties of solution-processed indium-gallium-zinc-oxide thin-film transistors ［J］. IEEE Trans. Electron Device, 2010, 57(5):1009-1014.

[3] Nomura K, Ohta H, Takagi A, et al. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors ［J］. Nature, 2004, 432:488-492.

[4] Chen T C, Chang T C, Hsieh T Y, et al. Investigating the degradation behavior caused by charge trapping effect under DC and AC gate-bias stress for InGaZnO thin film transistor ［J］. Appl. Phys. Lett., 2011, 99(2):022104-1-3.

[5] Kumar B, Gong H, Akkipeddi R. High mobility undoped amorphous indium zinc oxide transparent thin films ［J］. J. Appl. Phys., 2005, 98(7):073703-1-6.

[6] Xin E L, Li X F, Chen L L, et al. Fabrication of amorphous indium gallium zinc oxide thin film transistor at low temperature by RF magnetron sputtering ［J］. Chin. J. Lumin.(发光学报), 2012, 33(10):1149-1152 (in Chinese).

[7] Park S K, Kim Y H, Han J I. All solution-processed high-resolution bottom-contact transparent metal-oxide thin film transistors ［J］. J. Phys. D: Appl. Phys., 2009, 42:125102-1-6.

[8] Yang Y H, Yang S S, Kao C Y, et al. Chemical and electrical properties of low-temperature solution-processed In-Ga-Zn-O thin-film transistors ［J］. IEEE Electron Device Lett., 2010, 31(4):329-331.

[9] Kim C E, Cho E N, Moon P, et al. Density-of-states modeling of solution-processed InGaZnO thin-film transistors ［J］. IEEE Electron Device Lett., 2010, 31(10):1131-1133.

[10] Kim G H, Ahn B D, Shin H S, et al. Effect of indium composition ratio on solution-processed nanocrystalline InGaZnO thin film transistors ［J］. Appl. Phys. Lett., 2009, 94(23):233501-1-3.

[11] Kim D, Koo C Y, Song K K, et al. Compositional influence on sol-gel-derived amorphous oxide semiconductor thin film transistors ［J］. Appl. Phys. Lett., 2009, 95(10):103501-1-3.

[12] Lim J H, Shim J H, Choi J H, et al. Solution-processed InGaZnO-based thin film transistors for printed electronics applications ［J］. Appl. Phys. Lett., 2009, 95(1):012108-1-3.

[13] Wang X Y, Dong G F, Qiao J, et al. Preparation and field-effect property of solution-processed multilayer zinc oxide ［J］. Acta Phys.-Chim. Sinica (物理化学学报), 2010, 26(1):249-252 (in Chinese).

[14] Wang X Y, Dong G F, Qiao J, et al. Solution-processed zinc oxide thin films and top-gate thin film transistors ［J］. Chin. J. Inorg. Chem.(无机化学学报), 2009, 25(12):2071-2076 (in Chinese).

[15] Kim M G, Kanatzidis M G, Facchetti A, et al. Low-temperature fabrication of high-performance metal oxide thin-film electronics via combustion processing ［J］. Nat. Mater., 2011, 10(5):382-388.

[16] Jeong Y M, Bae C D, Kim D J, et al. Bias-stress-stable solution-processed oxide thin film transistors ［J］. Appl. Mater. Inter., 2010, 2(3):611-615.

[17] Kamiya T, Nomura K, Hosono H. Present status of amorphous In-Ga-Zn-O thin-film transistors ［J］. Sci. Technol. Adv. Mater., 2010, 11(4):044305-1-5.

[18] Ide K, Kikuchi Y, Nomura K, et al. Effects of excess oxygen on operation characteristics of amorphous In-Ga-Zn-O thin-film transistors ［J］. Appl. Phys. Lett., 2011, 99(9):093507-1-3.

[19] Jeong S, Ha Y G, Moon J, et al. Role of gallium doping in dramatically lowering amorphous oxide-processing temperatures for solution-derived indium zinc oxide thin-film transistors ［J］. Adv. Mater., 2010, 22(12):1346-1350.

[20] Pasquarelli R M, Ginley D S, Hayre R O. Solution processing of transparent conductors: From flask to film ［J］. Chem. Soc. Rev., 2011, 40(11):5406-5441.

[21] Song K, Kim D, Li X S, et al. Solution processed invisible all-oxide thin film transistors ［J］. J. Mater. Chem., 2009, 19(46):8881-8886.

[22] Jeong W H, Bae J H, Kim H J. High-performance oxide thin-film transistors using a volatile nitrate precursor for low-temperature solution process ［J］. IEEE Electron Device Lett., 2012, 33(1):68-70.

[23] Chen C K, Hsieh H H, Shyue J J, et al. The influence of channel compositions on the electrical properties of solution-processed indium-zinc oxide thin-film transistors ［J］. J. Display Technol., 2009, 5(12): 509-514.

[24] Park K B, Seon J B, Kim G H, et al. High electrical performance of wet-processed indium zinc oxide thin-film transistors ［J］. IEEE Electron Device Lett., 2010, 31(4):311-313.