通过电化学沉积法从N，N-二甲基甲酰胺(DMF)溶液中制备出铜掺杂氧化镍电致变色薄膜，采用扫描电子显微镜(SEM)、X射线衍射仪(XRD)、紫外可见分光光度仪(UV-vis)、傅里叶变换红外光谱仪(FTIR)、计时阶跃曲线(CA)和循环伏安曲线(CV)对所制备的薄膜进行了形貌、结构、光学以及电化学性能的观测和表征。通过对不同掺杂原子数分数、沉积电位以及沉积时间下所制备薄膜的光学性能的研究，得到了薄膜制备的优化工艺条件。结果表明，在室温下，当掺杂原子数分数比例为18、沉积电压为3.5 V和沉积时间为15 min时，薄膜具有最佳的电致变色性能，透射率差值最大可达到78.7%；Cu掺杂产生了具有纳米棒状结构的物质，经XRD证实为面心立方型NixCu1-xO；电化学测试结果显示薄膜的响应时间较短，且具有较好的循环寿命。

Cu-doped nickel oxide (NiO) thin films are prepared by electrochemical deposition technique from N, N-dimethylformamide (DMF) solutions. Morphology, structure, optical and electrochromic properties of the Cu-doped NiO films are investigated by means of scanning electron microscope (SEM), X-ray diffraction (XRD), ultraviolet-visible spectrophotometer (UV-vis), Fourier-transform infrared spectrometer(FTIR) and cyclic voltammetry (CV), respectively. Studies on the effects of Cu doping concentration, deposition potential and deposition time on the transmission properties of both the bleached state and colored state show that when CuNi =18, the film deposited under 3.5 V for 15 min exhibits the optimum electrochromic behavior with a max variation of transmittance (ΔTλ=560 nm) up to 78.7%. SEM images indicate the formation of nanorods. The films are formed with amorphous or short-range ordered NiO grains and a trace of face-centered cubic NixCu1-xO confirmed by XRD. Cu-doped NiO film also exhibits the fast response time as well as long cycle life.