p-n结光伏探测器的工作体制
康蓉, 朱佩玲, 袁绶章, 张鹏, 环健. p-n结光伏探测器的工作体制[J]. 红外技术, 2010, 32(9): 546.
KANG Rong, ZHU Pei-ling, YUAN Shou-zhang, ZHANG Peng, HUAN Jian. The Operating Form of p-n Photovoltaic Detector[J]. Infrared Technology, 2010, 32(9): 546.
[1] Guggenbuehl Strutt, W, M.J.O. Theory and Experiments on Shot Noise in Semiconductor Junction Diodes and Transistors[C]//Proc. IRE, 1957. 45(6):839-854.
[2] DeWames R. E,. Williams G. M, Pasko J. G., et al. Current generation mechanisms in small band gap HgCdTe p-n junctions fabricated by ion implantation[J]. Journal of Crystal Growth, 1990, 86(1-4): 849-858.
[3] . Deep p-n junction in Hg1-xCdxTe created by ion milling[J]. Semiconductor Science and Technology, 1993, 8(9): 1695.
[4] . P. G., Pham L. T.,. Venzor G. M, et al. HgCdTe focal plane arrays for dual-color mid- and long-wavelength infrared detection[J]. Journal of Electronic Materials, 2004, 33(6): 509-516.
[5] Haoyang Cui, Zhifeng Li, Zhenhua Ye,et al. Methods for determining minority carrier lifetime in HgCdTe photovoltaic detectors[C]//34th International Conference on Infrared, Millimeter, and Terahertz Waves, 2009: 1-2.
[6] . Current status and issues in the surface passivation technology of mercury cadmium telluride infrared detectors[J]. Semiconductor Science and Technology, 1998, 13(8): 839.
[7] . HgCdTe infrared detectors[J]. Opto-Electronics Review, 2002, 10(3): 159-174.
康蓉, 朱佩玲, 袁绶章, 张鹏, 环健. p-n结光伏探测器的工作体制[J]. 红外技术, 2010, 32(9): 546. KANG Rong, ZHU Pei-ling, YUAN Shou-zhang, ZHANG Peng, HUAN Jian. The Operating Form of p-n Photovoltaic Detector[J]. Infrared Technology, 2010, 32(9): 546.
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