外加条件及两种电子传输对量子点红外探测器噪声的影响
金英姬. 外加条件及两种电子传输对量子点红外探测器噪声的影响[J]. 光子学报, 2017, 46(4): 0404002.
JIN Ying-ji. Influence of the Preset Condition and the Two Electrons Transport on the Noise of the Quantum Dot Infrared Photodetectors[J]. ACTA PHOTONICA SINICA, 2017, 46(4): 0404002.
[1] MAHMOODI A, JAHROMI H D, SHEIKHI M H. Dark current modeling and noise analysis in quantum dot infrared photodetectors[J]. IEEE Sensors Journal, 2015, 15(10): 5504-5509.
[2] LIU Hong-mei, ZHANG Jian-qi, GAO Zhi-xiang, et al. Photodetection of infrared photodetecto based on surrounding barriers formed by charged quantum dots[J]. IEEE Photonics Journal, 2015, 7(3): 6801708.
[3] JAHROMI H D, SHEIKHI M H, YOUSEFI M H. A numerical approach for analyzing quantum dot infrared photodetectors’ parameters[J]. Optics & Laser Technology, 2012, 44(3): 572-577.
[4] 刘红梅, 王萍, 石云龙. 量子点红外探测器的光电流和响应率[J]. 红外与毫米波学报, 2016, 35(2): 139-142.
[5] DUBOZ J Y, LIU H C, WASILEWSKI Z R, et al. Tunnel current in quantum dot infrared photodetectors[J]. Journal of Applied Physics, 2003, 93(2): 1320-1322.
[6] KIM E T, MADHUKAR A, YE Z, et al. High detectivity InAs quantum dot infrared photodetectors [J]. Applied Physics Letter, 2004, 84(17): 3277-3279.
[7] LU X, VAILLANCOURT J, MEISNER M J. Temperature-dependent photoresponsivity and high-temperature (190K) operation of a quantum dot infrared photodetector [J]. Applied Physics Letter, 2007, 91(5): 051115.
[8] RYZHII V, KHMYROVA I, PIPA V, et al. Device model for quantum dot infrared photodetectors and their dark-current characteristics [J]. Semi-conductor Science and Technology, 2001, 16: 331-338.
[9] STIFF-ROBERTS A D, SU X H, CHAKRABARTI S, et al. Contribution of field-assisted tunneling emission to dark current in InAs–GaAs quantum dot infrared photodetectors [J]. IEEE Photonics Technology Letters, 2004, 16(3): 867-869.
[10] JAHROMI H D, SHEIKHI M H, YOUSEFI M H. Investigation of the quantum dot infrared photodetectors dark current [J]. Optics & Laser Technology, 2011, 43(6): 1020-1025.
[11] LIU H C. Quantum dot infrared photodetector[J]. Opto-electronics Review, 2003, 11(1): 1-5.
[12] ZHAO Z Y, YI C, LANTZ K R, et al. Effect of donor-complex-defect-induced dipole field on InAs/GaAs quantum dot infrared photodetector activation energy[J]. Applied Physics Letter, 2007, 90(23): 233511.
[13] LIN L, ZHEN H L, LI N, et al. Sequential coupling transport for the dark current of quantum dots-in-well infrared photodetectors[J]. Applied Physics letters, 2010, 97(19): 193511.
[14] LIU Hong-mei, ZHANG Jian-qi. Performance investigations of quantum dot infrared photodetectors[J]. Infrared Physics & Technology, 2012, 55(4): 320-325.
[15] BAI Hong-gang, ZHANG Jian-qi, WANG Xiao-rui, et al. Characteristics analysis of dark current in quantum dot infrared photodetectors[J]. Optics & Laser Technology, 2013, 48(6): 337-342.
[16] 石鑫, 徐建萍, 李霖霖, 等. 碳量子点负载TiO2纳米棒阵列的光电化学性质[J]. 发光学报, 2015,36(8): 898-905.
[17] YE Z, CAMPBELL J C, CHEN Z, et al. Noise and photoconductive gain in InAs quantum-dot infrared photodetectors[J]. Applied Physics Letter, 2003, 83(6): 1234-1236.
金英姬. 外加条件及两种电子传输对量子点红外探测器噪声的影响[J]. 光子学报, 2017, 46(4): 0404002. JIN Ying-ji. Influence of the Preset Condition and the Two Electrons Transport on the Noise of the Quantum Dot Infrared Photodetectors[J]. ACTA PHOTONICA SINICA, 2017, 46(4): 0404002.