基于溶液法的规则排列连续晶畴的金属诱导多晶硅薄膜及薄膜晶体管
赵淑云, 孟志国, 王文, 郭海成. 基于溶液法的规则排列连续晶畴的金属诱导多晶硅薄膜及薄膜晶体管[J]. 液晶与显示, 2010, 25(3): 333.
ZHAO Shu-yun, MENG Zhi-guo, WONG1 Man, KWOK Hoi-sing. Defined-Grain Polycrystalline Thin Film Transistors Using Solution-Based Metal Induced Crystallization[J]. Chinese Journal of Liquid Crystals and Displays, 2010, 25(3): 333.
[1] . Nickel induced crystallization of amorphous silicon thin film[J]. J. Appl. Phys., 1998, 84(1): 194-200.
[2] . Polycrystalline silicon reduced by Ni-silicide mediated crystallization of amorphous silicon in an electric field[J]. J. Appl. Phys., 2000, 88(5): 3099-3101.
[3] . Characteristics of polycrystalline-Si thin film transistors fabricated by excimer laser annealing method[J]. IEEE Transactions on Electron Devices, 1994, 41(10): 1876-1879.
[4] . Low temperature poly-Si thin-film transistor fabrication by metal-induced lateral crystallization[J]. IEEE Electron Devices Letters, 1996, 17(4): 160-162.
[5] . Active-matrix organic light-emitting diode displays realized using metal-induced unilaterally crystallized polycrystalline silicon thin-film transistors[J]. IEEE Transactions on Electron Devices, 2002, 49(6): 991-996.
[6] . Giant-grain silicon (GGS) and its application to stable thin-film transistor[J]. Displays, 2005, 26: 137-142.
[7] . Polycrystalline silicon films and thin-film transistors using solution-based metal-induced crystallization[J]. J. Display Technology, 2006, 2(3): 265-273.
赵淑云, 孟志国, 王文, 郭海成. 基于溶液法的规则排列连续晶畴的金属诱导多晶硅薄膜及薄膜晶体管[J]. 液晶与显示, 2010, 25(3): 333. ZHAO Shu-yun, MENG Zhi-guo, WONG1 Man, KWOK Hoi-sing. Defined-Grain Polycrystalline Thin Film Transistors Using Solution-Based Metal Induced Crystallization[J]. Chinese Journal of Liquid Crystals and Displays, 2010, 25(3): 333.