微机械热电堆红外探测器由于无需致冷，后续检测电路简单，成本低等优点在许多领域得到了广泛应用。提出了一种采用互补金属氧化物半导体(CMOS)兼容技术及自对准工艺制作的微机械热电堆红外探测器，以减小微机械热电堆红外探测器的工艺复杂度，减小微小释放孔结构的制作难度。和传统的微机械热电堆红外探测器相比，自对准微机械热电堆红外探测器的释放孔大小是由多晶硅热电偶臂之间的间距确定，而不是由光刻工艺确定。为研究自对准微机械热电堆红外探测器性能和热电堆结构之间的关系，设计并制作了两种不同结构的自对准微机械热电堆红外探测器。测试结果表明方形热电堆结构可以获得大的输出电压及响应率，圆形热电堆结构则可以获得快的响应和大的探测率。

Due to its advantages of uncooling, ease of operation and low cost, micromachined thermopile infrared (IR) detectors have a broad application. A novel complementary metal-oxide-semiconductor (CMOS) compatible self-aligned micromachined thermopile IR detector is proposed to reduce the fabrication complication and fabrication difficulty of micro etching windows. Compared with conventional micromachined thermopile IR detectors, the etching windows in the self-aligned thermopile structure are determined by space between polysilicon thermocouple legs rather than by photolithographic processing. Two types of thermopile structures are designed and fabricated in order to study the influence of device structure on IR detector performance. Experimental results show that the rectangular thermopile structure has a higher output voltage and responsivity, whereas the circular IR detector exhibits a smaller response time and a higher specific detectivity.