中国激光, 2004, 31 (11): 1381, 网络出版: 2006-06-12  

高增益偏振不灵敏InGaAs/InP体材料半导体光放大器

High-Gain Polarization-Insensitive Semiconductor Optical Amplifier with Tensile-Strained InGaAs/InP Bulk Material
作者单位
1 中国科学院半导体研究所国家光电子工艺中心, 北京 100083
2 云南师范大学太阳能研究所,云南 昆明 650092
引用该论文

王书荣, 王圩, 朱洪亮, 张瑞英, 赵玲娟, 周帆, 田慧良. 高增益偏振不灵敏InGaAs/InP体材料半导体光放大器[J]. 中国激光, 2004, 31(11): 1381.

王书荣, 王圩, 朱洪亮, 张瑞英, 赵玲娟, 周帆, 田慧良. High-Gain Polarization-Insensitive Semiconductor Optical Amplifier with Tensile-Strained InGaAs/InP Bulk Material[J]. Chinese Journal of Lasers, 2004, 31(11): 1381.

参考文献

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王书荣, 王圩, 朱洪亮, 张瑞英, 赵玲娟, 周帆, 田慧良. 高增益偏振不灵敏InGaAs/InP体材料半导体光放大器[J]. 中国激光, 2004, 31(11): 1381. 王书荣, 王圩, 朱洪亮, 张瑞英, 赵玲娟, 周帆, 田慧良. High-Gain Polarization-Insensitive Semiconductor Optical Amplifier with Tensile-Strained InGaAs/InP Bulk Material[J]. Chinese Journal of Lasers, 2004, 31(11): 1381.

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