半导体光子学与技术, 2004, 10 (4): 248, 网络出版: 2011-08-15  

Optical Properties of Silicon-doped InGaN and GaN Layers

Optical Properties of Silicon-doped InGaN and GaN Layers
作者单位
Dept. of Phys., Xiamen University, Xiamen 361005, CHN
引用该论文

KANG Ling, LIU Bao-lin, CAI Jia-fa. Optical Properties of Silicon-doped InGaN and GaN Layers[J]. 半导体光子学与技术, 2004, 10(4): 248.

KANG Ling, LIU Bao-lin, CAI Jia-fa. Optical Properties of Silicon-doped InGaN and GaN Layers[J]. Semiconductor Photonics and Technology, 2004, 10(4): 248.

参考文献

[1] Nakamura S, Senoh M, Nagahama S, et al. InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate[J]. Appl. Phys. Lett., 1998, 72:211- 213.

[2] LIU Bao-lin. MOCVD growth of device - quality GaN on sapphire using a three - step approach [J]. Semiconductor Optoelectronics, 2001, 22(6): 428-432(in Chinese).

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[10] FAN Zhi-jun, LIU Xiang-lin, WAN Shou-ke, et al. Dependence of InGaN photoluminescence on temperature[J]. J. Semiconductors, 2001, 22(5): 569-572(in Chinese).

KANG Ling, LIU Bao-lin, CAI Jia-fa. Optical Properties of Silicon-doped InGaN and GaN Layers[J]. 半导体光子学与技术, 2004, 10(4): 248. KANG Ling, LIU Bao-lin, CAI Jia-fa. Optical Properties of Silicon-doped InGaN and GaN Layers[J]. Semiconductor Photonics and Technology, 2004, 10(4): 248.

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