太赫兹科学与电子信息学报, 2018, 16 (3): 383, 网络出版: 2018-07-24   

新型台面型 GaAs基 BIB探测器的背景电流测试与分析

Background current testing and analysis of a novel mesa-type GaAs-based BIB detector
作者单位
1 杭州电子科技大学电子信息学院, 浙江杭州 310018
2 中国电子科技集团公司第五十研究所, 上海 200331
引用该论文

尚竞成, 王晓东, 王兵兵, 陈雨璐, 潘鸣. 新型台面型 GaAs基 BIB探测器的背景电流测试与分析[J]. 太赫兹科学与电子信息学报, 2018, 16(3): 383.

SHANG Jingcheng, WANG Xiaodong, WANG Bingbing, CHEN Yulu, PAN Ming. Background current testing and analysis of a novel mesa-type GaAs-based BIB detector[J]. Journal of terahertz science and electronic information technology, 2018, 16(3): 383.

参考文献

[1] HU W D,WANG L,CHEN X S,et al. Room-temperature plasmonic resonant absorption for grating-gate GaN HEMTs in far infrared terahertz domain[J]. Optical and Quantum Electronics, 2013,45(7):713-720.

[2] GUO N,HU W D,CHEN X S,et al. Enhanced plasmonic resonant excitation in a grating gated field-effect transistor with supplemental gates[J]. Optics Express, 2013,21(2):1606-1614.

[3] LI W,HUANG Z,WANG J,et al. Thermal crosstalk simulation and measurement of linear terahertz detector arrays[J]. Infrared Physics & Technology, 2015(73):73-77.

[4] FRANKE C,WALTHER M,HELM M,et al. Two-photon quantum well infrared photodetectors below 6 THz[J]. Infrared Physics & Technology, 2014(70):30-33.

[5] infrared photodetectors[J]. Science China Physics, Mechanics & Astronomy, 2015,58(2):1-13.

    QIU W C,HU W D. Laser beam induced current microscopy and photocurrent mapping for junction characterization of

[6] HU W D,CHEN X S,YE Z H,et al. Dependence of ion-implant-induced LBIC novel characteristic on excitation intensity for long-wavelength HgCdTe-based photovoltaic infrared detector pixel arrays[J]. IEEE Journal of Selected Topics in Quantum Electronics, 2013,19(5):1-7.

[7] PETROFF M D,STAPELBROEK M G. Blocked impurity band detectors: US4568960[P]. 1986-02-04.

[8] WANG X,WANG B,HOU L,et al. Design consideration of GaAs-based blocked-impurity-band detector with the absorbing layer formed by ion implantation[J]. Optical and Quantum Electronics, 2015,47(6):1347-1355.

[9] LIAO K S,LI N,WANG C,et al. Extended mode in blocked impurity band detectors for terahertz radiation detection[J]. Applied Physics Letters, 2014,105(14):143501-143501-5.

[10] ANDO K J,HOFFMAN A W,LOVE P J,et al. Development of Si:as impurity band conduction(IBC) detectors for mid-

    infrared applications[J]. Proceedings of SPIE-The International Society for Optical Engineering, 2003(5074):648-657.

[11] TEZCAN D S,MUNCK K D,MERKEN P,et al. Development of a Si:as blocked impurity band detector for far IR

    detection[J]. Proceedings of SPIE-The International Society for Optical Engineering, 2007,6660:66600R-66600R-12.

[12] HAEGEL N M. BIB detector development for the far infrared:from Ge to GaAs[J]. Proceedings of SPIE-The International

    Society for Optical Engineering, 2003(4999):182-194.

[13] HANAOKA M,KANEDA H,OYABU S,et al. Development of blocked-impurity-band-type Ge detectors fabricated with the surface-activated wafer bonding method for far-infrared astronomy[J]. Journal of Low Temperature Physics, 2016,184(1): 225-230.

[14] REICHERTZ L A,BEEMAN J W,CARDOZO B L,et al. Development of a GaAs-based BIB detector for sub-mm wavelengths[C]// Millimeter and Submillimeter Detectors and Instrumentation for Astronomy III. [S.l.]:SPIE, 2006(6275): 62751S-1-62751S-8.

尚竞成, 王晓东, 王兵兵, 陈雨璐, 潘鸣. 新型台面型 GaAs基 BIB探测器的背景电流测试与分析[J]. 太赫兹科学与电子信息学报, 2018, 16(3): 383. SHANG Jingcheng, WANG Xiaodong, WANG Bingbing, CHEN Yulu, PAN Ming. Background current testing and analysis of a novel mesa-type GaAs-based BIB detector[J]. Journal of terahertz science and electronic information technology, 2018, 16(3): 383.

本文已被 1 篇论文引用
被引统计数据来源于中国光学期刊网
引用该论文: TXT   |   EndNote

相关论文

加载中...

关于本站 Cookie 的使用提示

中国光学期刊网使用基于 cookie 的技术来更好地为您提供各项服务,点击此处了解我们的隐私策略。 如您需继续使用本网站,请您授权我们使用本地 cookie 来保存部分信息。
全站搜索
您最值得信赖的光电行业旗舰网络服务平台!