Photonics Research, 2020, 8 (6): 06000806, Published Online: Apr. 30, 2020  

Analysis of TM/TE mode enhancement and droop reduction by a nanoporous n-AlGaN underlayer in a 290 nm UV-LED Download: 839次

Author Affiliations
1 Shaanxi Provincial Key Laboratory of Photonics & Information Technology, Xi’an Jiaotong University, Xi’an 710049, China
2 Solid-State Lighting Engineering Research Center, Xi’an Jiaotong University, Xi’an 710049, China
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Yufeng Li, Chenyu Wang, Ye Zhang, Peng Hu, Shengnan Zhang, Mengqi Du, Xilin Su, Qiang Li, Feng Yun. Analysis of TM/TE mode enhancement and droop reduction by a nanoporous n-AlGaN underlayer in a 290 nm UV-LED[J]. Photonics Research, 2020, 8(6): 06000806.

References

[1] H. Hirayama, N. Maeda, S. Fujikawa, S. Toyoda, N. Kamata. Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes. Jpn. J. Appl. Phys., 2014, 53: 100209.

[2] T. Takano, T. Mino, J. Sakai, N. Noguchi, K. Tsubaki, H. Hirayama. Deep-ultraviolet light-emitting diodes with external quantum efficiency higher than 20% at 275  nm achieved by improving light-extraction efficiency. Appl. Phys. Express, 2017, 10: 031002.

[3] Y. Nagasawa, A. Hirano. A review of AlGaN-based deep-ultraviolet light-emitting diodes on sapphire. Appl. Sci., 2018, 8: 1264.

[4] BrodrickJ.PattisonM.BardsleyN.ElliotC.HansenM.LeeK.PattisonL.TsaoJ.YamadaM., “2018 Solid-State Lighting R&D Opportunities,” DOE BTO SSL Program, DOE/EE-1907, (2019).

[5] S. Tan, J. Zhang, T. Egawa, G. Chen. Influence of quantum-well number and an AlN electron blocking layer on the electroluminescence properties of AlGaN deep ultraviolet light-emitting diodes. Appl. Sci., 2018, 8: 2402.

[6] N. Susilo, S. Hagedorn, D. Jaeger, H. Miyake, U. Zeimer, C. Reich, B. Neuschulz, L. Sulmoni, M. Guttmann, F. Mehnke, C. Kuhn, T. Wernicke, M. Weyers, M. Kneissl. AlGaN-based deep UV LEDs grown on sputtered and high temperature annealed AlN/sapphire. Appl. Phys. Lett., 2018, 112: 041110.

[7] B. T. Tran, N. Maeda, M. Jo, D. Inoue, T. Kikitsu, H. Hirayama. Performance improvement of AlN crystal quality grown on patterned Si(111) substrate for deep UV-LED applications. Sci. Rep., 2016, 6: 35681.

[8] H.-Y. Ryu, I.-G. Choi, H.-S. Choi, J.-I. Shim. Investigation of light extraction efficiency in AlGaN deep-ultraviolet light-emitting diodes. Appl. Phys. Express, 2013, 6: 062101.

[9] T. Kolbe, A. Knauer, C. Chua, Z. Yang, S. Einfeldt, P. Vogt, N. M. Johnson, M. Weyers, M. Kneissl. Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes. Appl. Phys. Lett., 2010, 97: 171105.

[10] M. Hou, Z. Qin, C. He, J. Cai, X. Wang, B. Shen. Effect of injection current on the optical polarization of AlGaN-based ultraviolet light-emitting diodes. Opt. Express, 2014, 22: 19589-19594.

[11] M. F. Schubert, S. Chhajed, J. K. Kim, E. F. Schubert, J. Cho. Polarization of light emission by 460  nm GaInN/GaN light-emitting diodes grown on (0001) oriented sapphire substrates. Appl. Phys. Lett., 2007, 91: 051117.

[12] H. Hirayama, S. Fujikawa, N. Noguchi, J. Norimatsu, T. Takano, K. Tsubaki, N. Kamata. 222–282  nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire. Phys. Status Solidi A, 2009, 206: 1176-1182.

[13] K. B. Nam, J. Li, M. L. Nakarmi, J. Y. Lin, H. X. Jiang. Unique optical properties of AlGaN alloys and related ultraviolet emitters. Appl. Phys. Lett., 2004, 84: 5264-5266.

[14] J. R. Grandusky, J. Chen, S. R. Gibb, M. C. Mendrick, C. G. Moe, L. Rodak, G. A. Garrett, M. Wraback, L. J. Schowalter. 270  nm pseudomorphic ultraviolet light-emitting diodes with over 60  mW continuous wave output power. Appl. Phys. Express, 2013, 6: 032101.

[15] S. Inoue, , M. Taniguchi. 150  mW deep-ultraviolet light-emitting diodes with large-area AlN nanophotonic light-extraction structure emitting at 265  nm. Appl. Phys. Lett., 2017, 110: 141106.

[16] S. Wang, J. Dai, J. Hu, S. Zhang, L. Xu, H. Long, J. Chen, Q. Wan, H.-C. Kuo, C. Chen. Ultrahigh degree of optical polarization above 80% in AlGaN-based deep-ultraviolet LED with moth-eye microstructure. ACS Photon., 2018, 5: 3534-3540.

[17] Y. Guo, Y. Zhang, J. Yan, H. Xie, L. Liu, X. Chen, M. Hou, Z. Qin, J. Wang, J. Li. Light extraction enhancement of AlGaN-based ultraviolet light-emitting diodes by substrate sidewall roughening. Appl. Phys. Lett., 2017, 111: 011102.

[18] J. W. Lee, J. H. Park, D. Y. Kim, E. F. Schubert, J. Kim, J. Lee, Y.-l. Kim, Y. Park, J. K. Kim. Arrays of truncated cone AlGaN deep-ultraviolet light-emitting diodes facilitating efficient outcoupling of in-plane emission. ACS Photon., 2016, 3: 2030-2034.

[19] Y. Zhang, R. Meng, Z.-H. Zhang, Q. Shi, L. Li, G. Liu, W. Bi. Effects of inclined sidewall structure with bottom metal air cavity on the light extraction efficiency for AlGaN-based deep ultraviolet light-emitting diodes. IEEE Photon. J., 2017, 9: 1600709.

[20] Y. Takashima, R. Shimizu, M. Haraguchi, Y. Naoi. Polarized emission characteristics of UV-LED with subwavelength grating. Jpn. J. Appl. Phys., 2014, 53: 072101.

[21] G. Yuan, K. Xiong, C. Zhang, Y. Li, J. Han. Optical engineering of modal gain in a III-nitride laser with nanoporous GaN. ACS Photon., 2016, 3: 1604-1610.

[22] T. Detchprohm, Y.-S. Liu, K. Mehta, S. Wang, H. Xie, T.-T. Kao, S.-C. Shen, P. D. Yoder, F. A. Ponce, R. D. Dupuis. Sub 250  nm deep-UV AlGaN/AlN distributed Bragg reflectors. Appl. Phys. Lett., 2017, 110: 011105.

[23] J. J. Wierer, A. A. Allerman, I. Montano, M. W. Moseley. Influence of optical polarization on the improvement of light extraction efficiency from reflective scattering structures in AlGaN ultraviolet light-emitting diodes. Appl. Phys. Lett., 2014, 105: 061106.

[24] A. Najar, M. Gerland, M. Jouiad. Porosity-induced relaxation of strains in GaN layers studied by means of micro-indentation and optical spectroscopy. J. Appl. Phys., 2012, 111: 093513.

[25] V. Y. Davydov, I. N. Goncharuk, A. N. Smirnov, A. E. Nikolaev, W. V. Lundin, A. S. Usikov, A. A. Klochikhin, J. Aderhold, J. Graul, O. Semchinova, H. Harima. Composition dependence of optical phonon energies and Raman line broadening in hexagonal AlxGa1–xN alloys. Phys. Rev. B, 2002, 65: 125203.

[26] H. Hartono, C. B. Soh, S. Y. Chow, S. J. Chua, E. A. Fitzgerald. Reduction of threading dislocation density in GaN grown on strain relaxed nanoporous GaN template. Appl. Phys. Lett., 2007, 90: 171917.

[27] L. Zhang, Y. N. Guo, J. C. Yan, Q. Q. Wu, X. C. Wei, J. X. Wang, J. M. Li. Deep ultraviolet light-emitting diodes with improved performance via nanoporous AlGaN template. Opt. Express, 2019, 27: 4917-4926.

[28] S.-J. Kim, K. J. Lee, S. Oh, J.-H. Han, D. S. Lee, S.-J. Park. Enhanced performance of InGaN/GaN MQW LED with strain-relaxing Ga-doped ZnO transparent conducting layer. Opt. Express, 2019, 27: A458-A467.

[29] T. Y. Wang, C. T. Tasi, C. F. Lin, D. S. Wuu. 85% internal quantum efficiency of 280-nm AlGaN multiple quantum wells by defect engineering. Sci. Rep., 2017, 7: 14422.

[30] H. Hu, S. Zhou, H. Wan, X. Liu, N. Li, H. Xu. Effect of strain relaxation on performance of InGaN/GaN green LEDs grown on 4-inch sapphire substrate with sputtered AlN nucleation layer. Sci. Rep., 2019, 9: 3447.

[31] Y. Taniyasu, M. Kasu. Surface 210  nm light emission from an AlN p-n junction light-emitting diode enhanced by A-plane growth orientation. Appl. Phys. Lett., 2010, 96: 221110.

[32] X. Chen, C. Ji, Y. Xiang, X. Kang, B. Shen, T. Yu. Angular distribution of polarized light and its effect on light extraction efficiency in AlGaN deep-ultraviolet light-emitting diodes. Opt. Express, 2016, 24: A935-A942.

[33] J.-I. Chyi, M.-H. Lo, Y. Nanishi, Y.-J. Cheng, H.-C. Kuo, H. Morkoç, J. Piprek, S.-C. Wang, E. Yoon. Fabrication and lasing characteristics of GaN nanopillars. Proc. SPIE, 2011, 7939: 79391T.

[34] J. E. Northrup, C. L. Chua, Z. Yang, T. Wunderer, M. Kneissl, N. M. Johnson, T. Kolbe. Effect of strain and barrier composition on the polarization of light emission from AlGaN/AlN quantum wells. Appl. Phys. Lett., 2012, 100: 021101.

[35] C. Liu, Y. K. Ooi, S. M. Islam, H. Xing, D. Jena, J. Zhang. 234  nm and 246  nm AlN-Delta-GaN quantum well deep ultraviolet light-emitting diodes. Appl. Phys. Lett., 2018, 112: 011101.

[36] Z. Bryan, I. Bryan, S. Mita, J. Tweedie, Z. Sitar, R. Collazo. Strain dependence on polarization properties of AlGaN and AlGaN-based ultraviolet lasers grown on AlN substrates. Appl. Phys. Lett., 2015, 106: 232101.

[37] J. Yan, J. Wang, Y. Zhang, P. Cong, L. Sun, Y. Tian, C. Zhao, J. Li. AlGaN-based deep-ultraviolet light-emitting diodes grown on High-quality AlN template using MOVPE. J. Cryst. Growth, 2015, 414: 254-257.

[38] M. Shatalov, W. Sun, A. Lunev, X. Hu, A. Dobrinsky, Y. Bilenko, J. Yang, M. Shur, R. Gaska, C. Moe, G. Garrett, M. Wraback. AlGaN deep-ultraviolet light-emitting diodes with external quantum efficiency above 10%. Appl. Phys. Express, 2012, 5: 082101.

[39] C. De Santi, M. Meneghini, D. Monti, J. Glaab, M. Guttmann, J. Rass, S. Einfeldt, F. Mehnke, J. Enslin, T. Wernicke, M. Kneissl, G. Meneghesso, E. Zanoni. Recombination mechanisms and thermal droop in AlGaN-based UV-B LEDs. Photon. Res., 2017, 5: A44-A51.

[40] P.-M. Tu, J.-R. Chang, S.-C. Huang, S.-K. Yang, Y.-W. Lin, T.-C. Hung, C.-P. Hsu, C.-Y. Chang. Investigation of efficiency droop for UV LED with N-type AlGaN layer. Proc. SPIE, 2012, 8278: 82781B.

Yufeng Li, Chenyu Wang, Ye Zhang, Peng Hu, Shengnan Zhang, Mengqi Du, Xilin Su, Qiang Li, Feng Yun. Analysis of TM/TE mode enhancement and droop reduction by a nanoporous n-AlGaN underlayer in a 290 nm UV-LED[J]. Photonics Research, 2020, 8(6): 06000806.

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