红外与激光工程, 2020, 49 (12): 20201054, 网络出版: 2021-01-14  

2 μm GaSb基被动锁模激光器重复频率变化的研究(特邀)

Repetition frequency variation of a 2 μm GaSb-based passively mode-locked laser (Invited
作者单位
1 新加坡南洋理工大学 淡马锡实验室,新加坡 新加坡 637553
2 新加坡南洋理工大学 电子与电气工程学院,新加坡 新加坡 639798
3 海南师范大学 物理与电子工程学院,海南 海口 571158
4 中国科学院半导体研究所 半导体超晶格国家重点实验室,北京 100083
5 中国科学院长春光学精密机械与物理研究所 发光学及应用国家重点实验室,吉林 长春 130033
引用该论文

李翔, 汪宏, 乔忠良, 张宇, 牛智川, 佟存柱, 刘重阳. 2 μm GaSb基被动锁模激光器重复频率变化的研究(特邀)[J]. 红外与激光工程, 2020, 49(12): 20201054.

Xiang Li, Hong Wang, Zhongliang Qiao, Yu Zhang, Zhichuan Niu, Cunzhu Tong, Chongyang Liu. Repetition frequency variation of a 2 μm GaSb-based passively mode-locked laser (Invited)[J]. Infrared and Laser Engineering, 2020, 49(12): 20201054.

参考文献

[1] Rafailov E U, Cataluna M A, Sibbett W. Mode-locked quantum-dot lasers[J]. Nature photonics, 2007, 1(7): 395-401.

[2] Thompson M G, Rae A R, Xia M. InGaAs quantum-dot mode-locked laser diodes[J]. IEEE Journal of Selected Topics in Quantum Electronics, 2009, 15(3): 661-672.

[3] Kuntz M, Fiol G, Laemmlin M. High-speed mode-locked quantum-dot lasers and optical amplifiers[J]. Proceedings of the IEEE, 2007, 95(9): 1767-1778.

[4] Merghem K, Teissier R, Aubin G. Passive mode locking of a GaSb-based quantum well diode laser emitting at 2.1 μm[J]. Applied Physics Letters, 2015, 107(11): 111109.

[5] Holc K, Weig T, Pletschen W, et al. Picosecond pulse generation in monolithic GaNbased multisection laser diodes[C]Gallium Nitride Materials Devices VIII. International Society f Optics Photonics, 2013, 8625: 862515.

[6] Kemal J N, Marin-Palomo P, Panapakkam V. Coherent WDM transmission using quantum-dash mode-locked laser diodes as multi-wavelength source and local oscillator[J]. Optics express, 2019, 27(22): 31164-31175.

[7] Sadeev T, Arsenijević D, Franke D. 1.55 μm mode-locked quantum-dot lasers with 300 MHz frequency tuning range[J]. Applied Physics Letters, 2015, 106(3): 031114.

[8] Li X, Wang H, Qiao Z. High temperature characteristics of a 2 μm InGaSb/AlGaAsSb passively mode-locked quantum well laser[J]. Applied Physics Letters, 2019, 114(22): 221104.

[9] Huang X, Stintz A, Li H. Passive mode-locking in 1.3 μm two-section InAs quantum dot lasers[J]. Applied Physics Letters, 2001, 78(19): 2825-2827.

[10] Sulmoni L, Lamy J M, Dorsaz J. Static and dynamic properties of multi-section InGaN-based laser diodes[J]. Journal of Applied Physics, 2012, 112(10): 103112.

[11] Thompson M G, Rae A, Sellin R L. Subpicosecond high-power mode locking using flared waveguide monolithic quantum-dot lasers[J]. Applied Physics Letters, 2006, 88(13): 133119.

李翔, 汪宏, 乔忠良, 张宇, 牛智川, 佟存柱, 刘重阳. 2 μm GaSb基被动锁模激光器重复频率变化的研究(特邀)[J]. 红外与激光工程, 2020, 49(12): 20201054. Xiang Li, Hong Wang, Zhongliang Qiao, Yu Zhang, Zhichuan Niu, Cunzhu Tong, Chongyang Liu. Repetition frequency variation of a 2 μm GaSb-based passively mode-locked laser (Invited)[J]. Infrared and Laser Engineering, 2020, 49(12): 20201054.

引用该论文: TXT   |   EndNote

相关论文

加载中...

关于本站 Cookie 的使用提示

中国光学期刊网使用基于 cookie 的技术来更好地为您提供各项服务,点击此处了解我们的隐私策略。 如您需继续使用本网站,请您授权我们使用本地 cookie 来保存部分信息。
全站搜索
您最值得信赖的光电行业旗舰网络服务平台!