基于碳纳米管的良好导电性、激子传输性能和量子点聚合物复合材料高的光电转换性能，采用原位缩合法制备了聚合物聚(2-甲氧基-5-辛氧基)-对苯乙炔-功能化碳纳米管-硒化铅量子点复合材料.通过对复合材料的X射线衍射、透射电子显微镜和紫外可见吸收光谱研究，发现聚合物聚(2-甲氧基-5-辛氧基)-对苯乙炔，功能化碳纳米管与硒化铅量子点可以有效地复合，且功能化碳纳米管与聚合物聚(2-甲氧基-5-辛氧基)-对苯乙炔形成网状结构；硒化铅量子点尺寸为5.75 nm，其可均匀地分散在聚合物聚(2-甲氧基-5-辛氧基)-对苯乙炔-功能化碳纳米管基体中形成包覆或镶嵌结构，并发生了光诱导电荷转移. 通过对复合材料的光电性能研究发现，插入不同厚度阴极修饰材料LiF后其光电性能提高，且当LiF为3 nm时，开路电压为0.558 V，短路电流为2.338 mA，填充因子为37.6%，转换效率为0.466%，与不插入修饰材料时相比复合材料光电性能提高了30%.

Single-walled carbon nanotubes have characteristics of good conductivity, baryon transmission performance, and high photoelectric conversion performance of quantum dot composite material. In situ condensation method was used to prepare polymer/poly(2-methoxy, 5-octoxy)-1, 4-phenylenevinylene-single walled carbon nanotubes-PbSe quantum dot composites. X-ray diffraction, transmission electron microscope, UV-vis absorption spectroscopy were applied to study their characteristics. The results indicate: poly(2-methoxy, 5-octoxy)-1, 4-phenylenevinylene, single walled carbon nanotubes and PbSe quantum dots can be effectively combined, especially the single walled carbon nanotubes and poly(2-methoxy, 5-octoxy)-1, 4-phenylenevinylene form a network structure in poly(2-methoxy, 5-octoxy)-1, 4-phenylenevinylene matrix; PbSe quantum dots, each with an average size of 5.75 nm, can be dispersed to form a coating or mosaic structure in the polymer substrate of poly(2-methoxy, 5-octoxy)-1, 4-phenylenevinylene -single walled carbon nanotubes, producing the light induced charge transfer phenomenon. The study of composite photoelectric performance shows that inserting different thicknesses of modification cathode material LiF, improving the photoelectric performance of the composite, and when the thickness of LiF is 3 nm, open circuit voltage is 0.558 V, short circuit current is 2.338 mA, fill factor is 37.6%, conversion efficiency is 0.466%. Compared with that without LiF, the optoelectronic properties increased 30%.