半导体光子学与技术, 2000, 6 (4): 193, 网络出版: 2011-08-09  

High Power InGaAsP/GaAs SCH SQW Lasers

High Power InGaAsP/GaAs SCH SQW Lasers
作者单位
1 Nat. Key Lab. of High Power Semicond. Laser, Changchun Institute of Opt. and Fin. Mechan., Changchun 130022, CHN
2 Nanjing Electron. Device Institute,Nanjing210016, CHN
引用该论文

LI Zhong-hui, YANG Jin-hua, WU Gen-zhu, WANG Xiang-wu, WANG Yu-xia, LI Mei, WANG Ling, ZHANG Xing-de. High Power InGaAsP/GaAs SCH SQW Lasers[J]. 半导体光子学与技术, 2000, 6(4): 193.

LI Zhong-hui, YANG Jin-hua, WU Gen-zhu, WANG Xiang-wu, WANG Yu-xia, LI Mei, WANG Ling, ZHANG Xing-de. High Power InGaAsP/GaAs SCH SQW Lasers[J]. Semiconductor Photonics and Technology, 2000, 6(4): 193.

参考文献

[1] Diaz J, Eliashevich I, Mobarhan K, et al. InGaP/InGaAsP/GaAs 0.808μm separate confinement laser diodes grown by metalorganic chemical vapor deposition[J]. IEEE Photonics Technology Letters, 1994, 6(2): 132.

[2] Plano W E, Major J S, Welch D F, et al. High power 875 nm Al-free laser diode[J]. IEEE Photonics Technology Letters, 1994, 6(4): 465-467.

[3] Garbuzov D Z, Antonishkis N Y, Bondarev A D. High power 0.8μm InGaAsP-GaAs SCH SQW lasers[J]. IEEE J.Quantum Electron., 1991, QE-27(6): 1 531-1 536.

[4] Olson J M. Ahrenkiel R K, Dunlavy D J, et al. Ultralow recombination velocity at GaInP/GaAs heterointerfaces[J]. Appl.Phys.Lett., 1989, 55(12): 1 208-1 210.

[5] Masahiko Asada, Atsushi Kameyama, Yasuharu Suematsu. Gain and intervalence band absorption in quantum-well lasers[J]. IEEE J. Quantum Electron.,1984, QE-20(7): 745-753.

LI Zhong-hui, YANG Jin-hua, WU Gen-zhu, WANG Xiang-wu, WANG Yu-xia, LI Mei, WANG Ling, ZHANG Xing-de. High Power InGaAsP/GaAs SCH SQW Lasers[J]. 半导体光子学与技术, 2000, 6(4): 193. LI Zhong-hui, YANG Jin-hua, WU Gen-zhu, WANG Xiang-wu, WANG Yu-xia, LI Mei, WANG Ling, ZHANG Xing-de. High Power InGaAsP/GaAs SCH SQW Lasers[J]. Semiconductor Photonics and Technology, 2000, 6(4): 193.

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