第三代红外探测器发展的一个重要方向是高工作温度探测器。对于碲镉汞n-on-p探测器而言，n⁺-n^--p结构以及良好的钝化工艺能够有效的抑制暗电流的产生，从而在高工作温度条件下获得较好的探测器性能。基于自行开发的成结模拟器，对n⁺-n^--p结构的高温器件进行了工艺仿真和器件仿真，获得成结过程的制备参数，并结合抑制表面漏电的组分梯度钝化工艺，将高工作温度下的暗电流抑制至理论极限，研制出可以在更高温度工作下的碲镉汞n-on-p红外焦平面探测器。经测试，中波n-on-p红外焦平面器件在不同工作温度下性能优异，在80K工作温度下噪声等效温差（NETD）达到了6.1 mK，有效像元率为99.96%；而在150K工作温度下噪声等效温差（NETD）为11.0 mK，有效像元率为99.50%，达到了同类器件的理论极限。

An important branch of the three-generation infrared focal plane is high operating temperature (HOT) infrared detector. For HgCdTe n-on-p detectors, dark current can be suppressed with n⁺-n^--p structure and good passivation, and then better performance of the detector will be obtained under high operating temperature. Based on the junction formation simulator, the junction formation parameters of HOT device are achieved and combined with the manufacture technology of optimized passivation layer, HgCdTe n-on-p infrared focal plane arrays which can operate at higher temperature was made in Shanghai Institute of Technical Physics(SITP). The performance of was studied at high operating temperature. One of mid-infrared detector has reached good performance under different operating temperature. The NETD is 6.10mK and operability is 99.96% at 80K, and the NETD is 11.0mK and operability is 99.50% at 150K , which reached the theoretical limit.