13.4 W single emitter 940 nm semiconductor laser diode with asymmetric large optical cavity

Jianjun Li; Shengjie Lin; Tao Liu; Jianchun Li; Jun Deng; Jun Han; Bifeng Cui

doi:doi:10.3788/col201412.s22502

Chinese Optics Letters, 2014, 12 (s2): S22502, Published Online: Dec. 4, 2014

13.4 W single emitter 940 nm semiconductor laser diode with asymmetric large optical cavity Download： 801次

Jianjun Li Shengjie Lin Tao Liu Jianchun Li Jun Deng Jun Han Bifeng Cui

Author Affiliations

Key Laboratory of Opto-electronics Technology of Ministry of Education, Beijing University of Technology, Beijing 100124, China

Basic Information

DOI:	10.3788/col201412.s22502
中图分类号:	--
栏目:	Optoelectronics
项目基金:	--
收稿日期:	Mar. 26, 2014
修改稿日期:	--
网络出版日期:	Dec. 4, 2014
通讯作者:
备注:	--

Jianjun Li, Shengjie Lin, Tao Liu, Jianchun Li, Jun Deng, Jun Han, Bifeng Cui. 13.4 W single emitter 940 nm semiconductor laser diode with asymmetric large optical cavity[J]. Chinese Optics Letters, 2014, 12(s2): S22502.