薄膜厚度对GZO透明导电膜及其LED器件性能的影响
顾文, 徐韬, 石继锋, 李喜峰, 张建华. 薄膜厚度对GZO透明导电膜及其LED器件性能的影响[J]. 发光学报, 2013, 34(8): 1022.
GU Wen, XU Tao, SHI Ji-feng, LI Xi-feng, ZHANG Jian-hua. Effect of The Film Thickness on The Performance of GZO Transparent Conductive Layer and LEDs with GZO Electrode[J]. Chinese Journal of Luminescence, 2013, 34(8): 1022.
[1] Loffler J, Groenen R, Linden J L, et al. Amorphous silicon solar cells on natively textured ZnO grown by PECVD [J]. Thin Solid Films, 2001, 392(2):315-319.
[2] Yim K B, Lee C M. Dependence of the electrical and optical properties of sputter-deposited ZnO∶Ga films on the annealing temperature, time, and atmosphere [J]. J. Mater. Sci.: Mater. Electron., 2007, 18(4):385-390.
[3] Ishikawa H, Kobayashi S, Koide Y, et al. Effects of surface treatments and metal work functions on electrical properties at p-GaN/metal interfaces [J]. J. Appl. Phys., 1997, 81(3):1315-1322.
[4] Koide Y, Maeda T, Kawakami T, et al. Effects of annealing in oxygen ambient on electrical properties of Ohmic contacts to p-type GaN [J]. J. Electron. Mater., 1999, 28(3):341-346.
[5] Kim H, Kim D J, Park S J, et al. Effect of an oxidized Ni/Au p contacts on the performance of GaN/InGaN multiple quantum well light-emitting diodes [J]. J. Appl. Phys., 2001, 89(2):1506-1508.
[6] Chopra K L, Major S, Pandya D K. Transparent conductors—A status review [J]. Thin Solid Films, 1983, 102(1):1-46.
[8] Tang C W, VanSlyke S A, Chen C H. Electroluminescence of doped organic thin films [J]. J. Appl. Phys., 1989, 65(9):3610-3616.
[9] Homma S, Miyamoto A, Sakamoto S, et al. Pulmonary fibrosis in an individual occupationally exposed to inhaled indium-tin oxide [J]. Eur. Resp. J., 2005, 25(1):200-204.
[10] Margalith T, Buchinsky O, Cohen D A, et al. Indium tin oxide contacts to gallium nitride optoelectronic devices [J]. Appl. Phys. Lett., 1999, 74(26):3930-3932.
[11] Igasaki Y, Kanma H. Argon gas pressure dependence of the properties of transparent conducting ZnO∶Al films deposited on glass substrates [J]. Appl. Surf. Sci., 2001, 169(170):508-511.
[12] Fortunato E, Assancao V, Goncalves A, et al. High quality conductive gallium-doped zinc oxide films deposited at room temperature [J]. Thin Solid Films, 2004, 451-452(2):443-447.
[13] Song S M, Yang T L, Xin Y Q, et al. Effect of GZO thickness and annealing temperature on the structural, electrical and optical properties of GZO/Ag/GZO sandwich films [J]. Curr. Appl. Phys., 2010, 10(2):452-456.
[14] Yang W F, Liu Z G, Zhan F, et al. Structural, electrical, and optical properties of transparent conductive A1-doped ZnO thin films prepared by RF magnetron sputtering [J]. Chin. J. Semicond., 2008, 29(12):2311-2315.
[15] Wang W J, Li X F, Zhang J H. Effect of ITO interface modulation layer on the performances of LEDs with Ga-doped ZnO electrode [J]. Chin. J. Lumin.(发光学报), 2012, 33(2):211-215 (in Chinese).
顾文, 徐韬, 石继锋, 李喜峰, 张建华. 薄膜厚度对GZO透明导电膜及其LED器件性能的影响[J]. 发光学报, 2013, 34(8): 1022. GU Wen, XU Tao, SHI Ji-feng, LI Xi-feng, ZHANG Jian-hua. Effect of The Film Thickness on The Performance of GZO Transparent Conductive Layer and LEDs with GZO Electrode[J]. Chinese Journal of Luminescence, 2013, 34(8): 1022.