Frontiers of Optoelectronics, 2013, 6 (3): 338, 网络出版: 2014-03-03
High performance of low voltage controlled ring oscillator with reverse body bias technology
High performance of low voltage controlled ring oscillator with reverse body bias technology
voltage controlled oscillator (VCO) leakage power active power oscillation frequency efficiency cadence tool
摘要
Abstract
In complementary metal oxide semiconductor (CMOS) nanoscale technology, power dissipation is becoming important metric. In this work low leakage voltage controlled ring oscillator circuit system was proposed for critical communication systems with high oscillation frequency. An ideal approach has been presented with substrate biasing technique for reduction of power consumption. The simulation have been completed using cadence virtuoso 45 nm standard CMOS technology at room temperature 27°C with supply voltage Vdd = 0.7 V. The simulation results suggest that voltage controlled ring oscillator has characterized with efficient low power voltage controlled oscillator (VCO) in term of minimum leakage power (1.23 nW) and maximum oscillation frequency (4.76 GHz) with joint positive channel metal oxide semiconductor and negative channel metal oxide semiconductor (PMOS and NMOS) reverse substrate bias technique. PMOS, NMOS and joint reverse body bias techniques have been compared in the presented work.
Akansha SHRIVASTAVA, Anshul SAXENA, Shyam AKASHE. High performance of low voltage controlled ring oscillator with reverse body bias technology[J]. Frontiers of Optoelectronics, 2013, 6(3): 338. Akansha SHRIVASTAVA, Anshul SAXENA, Shyam AKASHE. High performance of low voltage controlled ring oscillator with reverse body bias technology[J]. Frontiers of Optoelectronics, 2013, 6(3): 338.