[1] Hui Zhongxi, Yang Zhenhua. Free Electron Lasers [M]. Beijing: National Defence Industry Press, 1995. 1～4 (in Chinese)

[2] . Berhane, M. O. Manasreh, B. D. Weaver. He+-ion irradiation effect on intersubband transitions in GaAs/AlGaAs multiple quantum wells[J]. J. Appl. Phys., 2001, 89(6): 3517-3519.

[3] . . Effects of optic character of GaAs/AlGaAs multiple quantum well with proton irradiation[J]. Chinese J. Semiconductors (半导体学报), 1999, 20(11): 957-962.

[4] . Nakano, H. Kubo, N. Mori et al.. Luminescence from GaAs/AlGaAs quantum wells induced by mid-infrared free electron laser pulses[J]. Physica E, 2000, 7: 555-558.

[5] Shen Xuechu. Semiconductor Optics [M]. Beijing: Science Press, 1992. 633～636 (in Chinese)

[6] . H. Li, B. L. Weiss, K. S. Chan. Effect of interdiffusion on the subbands in an AlxGa1-xAs/GaAs single-quantum-well structure[J]. Phys. Rev. B, 1992, 46(23): 15181-15192.

[7] . . Modification of GaAs/AlGaAs quantum well infrared photodetectors by rapid thermal annealing[J]. Chinese J. Semiconductors (半导体学报), 2000, 21(3): 264-267.

[8] Xia Jianbai, Zhu Bangfen. Semiconductor Superlattice Physics [M]. Shanghai: Shanghai Science and Technology Press, 1995. 86～87 (in Chinese)