[1] 曹俊诚. 半导体太赫兹源、探测器与应用[M]. 北京: 科学出版社, 2012: 1.

    Cao Juncheng. Semiconductor Terahertz Sources, Detectors and Applications[M]. Beijing: Science Press, 2012: 1. (in Chinese)

[2] 秦华, 黄永丹, 孙建东, 等. 二维电子气等离激元太赫兹波器件[J]. 中国光学, 2017, 10(1): 51-66.

    Qin Hua, Huang Yongdan, Sun Jiandong, et al. Terahertz-wave devices based on plasmons in two-dimensional electron gas[J]. Chinese Optics, 2017, 10(1): 51-66. (in Chinese)

[3] 李婧, 张文, 缪巍, 等. 超高灵敏度太赫兹超导探测技术发展[J]. 中国光学, 2017, 10(1): 122-130.

    Li Jing, Zhang Wen, Miao Wei, et al. Development of ultra high sensitivity superconducting THz detectors[J]. Chinese Optics, 2017, 10(1): 122-130. (in Chinese)

[4] 张镜水, 孔令琴, 董立泉, 等. 太赫兹CMOS场效应管模型及实验分析[J]. 光学 精密工程, 2017, 25(12): 3128-3136.

    Zhang Jingshui, Kong Lingqin, Dong Liquan, et al. Terahertz CMOS transistor model and experimental analysis[J]. Optics and Precision Engineering, 2017, 25(12): 3128-3136. (in Chinese)

[5] Dyakonov M, Shur M. Shallow water analogy for a ballistic field effect transistor: New mechanism of plasma wave generation by dc current [J]. Physical Review Letters, 1993, 71(15): 2465-2468.

[6] Wang Lin, Chen Xiaoshuang, Hu Weida, et al. The plasmonic resonant absorption in GaN double-channel high electron mobility transistors[J]. Applied Physics Letters, 2011, 99(6): 063502.

[7] Guo Nan, Hu Weida, Chen Xiaoshuang, et al. Enhanced plasmonic resonant excitation in a grating gated field-effect transistor with supplemental gates[J]. Optics Express, 2013, 21(2): 1606-1614.

[8] Lu Jianqiang, Shur M S, Hesler J L, et al. Terahertz detector utilizing two-dimensional electronic fluid[J]. IEEE Electron Device Letters, 1998, 19(10): 373-375.

[9] 王林华, 袁明辉, 黄慧, 等. 太赫兹安检系统人体图像边缘物体识别[J]. 红外与激光工程, 2017, 46(11): 1125002.

    Wang Linhua, Yuan Minghui, Huang Hui, et al. Recognition of edge object of human body in THz security inspection system[J]. Infrared and Laser Engineering, 2017, 46(11): 1125002. (in Chinese)

[10] 赵正平. 固态微波毫米波、太赫兹器件与电路的新进展(续)[J]. 半导体技术, 2012, 36(1): 897-904.

    Zhang Zhengping. New developments of solid state microwave, millimeter-wave, THz devices and circuits (continued)[J]. Semiconductor Technology, 2012, 36(1): 897-904. (in Chinese)

[11] Lim B, Statham S, Misra S, et al. The radiometer atmospheric CubeSat experiment (RACE) pre-launch performance[C]// Microwave Symposium. IEEE, 2015.

[12] Li Jinlun, Cui Shaohui, Xu Jianxing, et al. Two-dimensional electron gas characteristics of InP-based high electron mobility transistor terahertz detector[J]. Chinese Physics B, 2018, 27(4): 047101.

[13] 童劲超, 黄敬国, 黄志明. 基于铟镓砷材料的新型太赫兹/亚毫米波探测器研究[J]. 红外与激光工程, 2014, 43(10): 3347-3351.

    Tong Jinchao, Huang Jingguo, Huang Zhiming. New type terahertz/sub-millimeter wave detector based on InGaAs layers[J]. Infrared and Laser Engineering, 2014, 43(10): 3347-3351. (in Chinese)

[14] Clawson A R. Guide to references on III-V semiconductor chemical etching[J]. Materials Science and Engineering R: Reports, 2001, 31(1-6): 1-438.

[15] 杨昕昕, 孙建东, 秦华. HEMT太赫兹探测器响应度和NEP的检测与分析[J]. 微纳电子技术, 2013, 50(2): 69-73.

    Yang Xinxin, Sun Jiandong, Qin Hua. Detection and analysis of the responsivity and NEP for HEMT terahertz detectors[J]. Micronanoelectronic Technology, 2013, 50(2): 69-73. (in Chinese)