红外与激光工程, 2018, 47 (3): 0320001, 网络出版: 2018-04-26   

基于AlGaN/GaN场效应晶体管的太赫兹焦平面成像传感器

Terahertz focal plane imaging array sensor based on AlGaN/GaN field effect transistors
作者单位
1 重庆光电技术研究所, 重庆 400060
2 中国科学院苏州纳米技术与纳米仿生研究所 中国科学院纳米器件与应用重点实验室, 江苏 苏州 215123
3 中国科学技术大学 纳米技术与纳米仿生学院, 江苏 苏州 215123
引用该论文

罗木昌, 孙建东, 张志鹏, 李想, 申志辉, 王颖, 陈红兵, 董绪丰, 张金峰, 陈扬, 周建勇, 秦华. 基于AlGaN/GaN场效应晶体管的太赫兹焦平面成像传感器[J]. 红外与激光工程, 2018, 47(3): 0320001.

Luo Muchang, Sun Jiandong, Zhang Zhipeng, Li Xiang, Shen Zhihui, Wang Ying, Chen Hongbing, Dong Xufeng, Zhang Jinfeng, Chen Yang, Zhou Jianyong, Qin Hua. Terahertz focal plane imaging array sensor based on AlGaN/GaN field effect transistors[J]. Infrared and Laser Engineering, 2018, 47(3): 0320001.

参考文献

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罗木昌, 孙建东, 张志鹏, 李想, 申志辉, 王颖, 陈红兵, 董绪丰, 张金峰, 陈扬, 周建勇, 秦华. 基于AlGaN/GaN场效应晶体管的太赫兹焦平面成像传感器[J]. 红外与激光工程, 2018, 47(3): 0320001. Luo Muchang, Sun Jiandong, Zhang Zhipeng, Li Xiang, Shen Zhihui, Wang Ying, Chen Hongbing, Dong Xufeng, Zhang Jinfeng, Chen Yang, Zhou Jianyong, Qin Hua. Terahertz focal plane imaging array sensor based on AlGaN/GaN field effect transistors[J]. Infrared and Laser Engineering, 2018, 47(3): 0320001.

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