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 Size-dependent optical properties of InGaN quantum dots in GaN nanowires grown by MBE

Yanxiong E Zhibiao HAO Jiadong YU Chao WU Lai WANG Bing XIONG Jian WANG Yanjun HAN Changzheng SUN Yi LUO

[摘要]Quantum dots in nanowires (DINWs) are considered as important building blocks for novel nanoscale semiconductor optoelectronic devices. In this paper, pure axial heterojunction InGaN/GaN DINWs are gro...

 PDF全文Frontiers of Optoelectronics | 2016, 9(02):318

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