提出了一种精确测量半导体激光器结温的方法。由于激光器的热容很小,因此采用脉冲注入的方法可以显著减小激光器的温升。研究了脉冲电流注入下激光器的激射波长随环境温度的变化规律,通过实验研究得到电流脉冲宽度和周期与激射波长的关系,理论分析得到的定量关系式与实验结果十分吻合。在此基础上得到了精确测量激光器结温的最佳脉冲参数,即脉宽为10 ns,脉冲周期为10 μs。并且确定了激光器结温与激射波长的定量关系式,波长随温度的漂移系数为0.0728 nm/K。这种方法避免了电学测量法中的结电压波形过冲,测量精度明显优于后者,同时也可以方便地测量封装好的激光器组件的温度特性。

An accurate method for measuring the chip temperature of semiconductor lasers is presented. Because the heat capacity of semiconductor laser is very small, using pulse injection can reduce temperature rising significantly. First, the change of environment temperature versus lasing wavelength under pulse injection is discussed, and the relationship between the lasing wavelength and the width and cycle of injection pulse is obtained. The measured relationship agrees well with the calculated one. Based on this relationship the optimum parameters of the pulse for measuring the chip temperature of laser diode (LD) are obtained, viz. pulse width is 10 ns, pulse cycle is 10 μs. The definite relation between lasing wavelength and chip temperature is developed, and the drift coefficient is 0.0728 nm/K. This method avoids junction voltage overshoot in electricity measurement, and it is more accurate than the latter. This method is also convenient for measuring temperature character of packaged laser unit.