中国激光, 2004, 31 (3): 297, 网络出版: 2006-06-12
在ZnO/Si衬底上ZnCdSe/ZnSe多量子阱的生长与光学特性
Growth and Optical Characteristic of ZnCdSe/ZnSe Multi-quantum Wells on ZnO/Si Substrates
薄膜物理学 Si衬底 ZnCdSe/ZnSe量子阱 低压金属有机化学气相淀积 thin film physics Si substrate ZnCdSe/ZnSe quantum well LP-MOCVD
摘要
在经NH3等离子体氮化的Si(100)衬底上,用等离子体增强化学气相淀积(PECVD)的方法生长了ZnO缓冲层,经X射线衍射(XRD)测量,得到了单一取向的ZnO(0002)膜.在此ZnO缓冲层上利用低压金属有机化学气相淀积(LP-MOCVD)方法生长了较高质量的ZnCdSe/ZnSe量子阱.通过不同阱宽的ZnCdSe/ZnSe量子阱生长和测量,得到了多级共振拉曼峰.从发光谱中可见,在520 nm附近有很强的发光,而在未覆盖ZnO的Si衬底上直接生长的ZnCdSe/ZnSe量子阱结构,其光致发光(PL)谱未见发光.可见,在氮化的Si衬底上覆盖ZnO膜生长的ZnCdSe/ZnSe量子阱质量较好,是一种在Si衬底上生长Ⅱ-Ⅵ族化合物半导体材料的有效方法.
Abstract
The growth of ZnCdSe/ZnSe quantum well on N-treated Si substrates which were covered with ZnO by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) was made. Prior to the growth, the Si substrates were treated with NH 3-passivate method, and then ZnO layer was deposited by plasma-enhanced chemical vapor deposition (PECVD) on the passivated Si substrates, X-ray measurement indicated that single orientation ZnO (0002) film was obtained. On these ZnO-Si substrates, ZnCdSe/ZnSe quantum wells were cnsequently grown by LP-MOCVD. There were multi-peaks in the Raman resonant spectra (RRS) of ZnCdSe/ZnSe quantum wells with different well width. PL investigations showed that the emission peak of the QW structures located at about 520 nm, at RT. However, the luminescent signals of the ZnCdSe/ZnSe quantum wells grown directly on Si substrates were undetectable. This indicated that using NH3-passivate Si substrates covered with ZnO film is an effective way to improve the quality of ZnCdSe/ZnSe quantum well.
王晓华, 范希武, 单崇新, 张振中, 刘益春. 在ZnO/Si衬底上ZnCdSe/ZnSe多量子阱的生长与光学特性[J]. 中国激光, 2004, 31(3): 297. 王晓华, 范希武, 单崇新, 张振中, 刘益春. Growth and Optical Characteristic of ZnCdSe/ZnSe Multi-quantum Wells on ZnO/Si Substrates[J]. Chinese Journal of Lasers, 2004, 31(3): 297.