光学学报, 2011, 31 (3): 0323002, 网络出版: 2011-02-24  

薄膜后栅型SnO2场发射显示器的制备及性能研究

Fabrication and Characteristics of Film-Under-Gate Field Emission Displays with SnO2 Emitters
作者单位
福州大学物理与信息工程学院, 福建 福州 350002
摘要
利用光刻、阳极氧化和剥离技术在玻璃基底制备薄膜后栅型场发射阵列,采用丝网印刷技术将一维SnO2纳米发射材料转移至后栅结构的阴极电极上,借助光学显微镜和扫描电镜观测薄膜后栅型场发射阴极阵列,利用ANSYS软件模拟了不同条件下阴极电极附近电子运动轨迹。结果表明,一维SnO2纳米线在阴极电极衬底上分布均匀,电子束斑随着阳压的增大而逐渐减小,随栅压的增加而变大。将阴极板与阳极荧光板制成了5 inch(1 inch=25.4 mm)单色薄膜后栅型结构场致发射显示器并对其进行了场发射性能测试。实验表明,在栅压和阳压分别为140 V和2000 V,阴极和阳极的距离为1100 μm时,薄膜后栅型SnO2场致发射显示器能实现全屏点亮,其器件的最大阳极电流为232 μA,峰值亮度为270 cd/m2,稳定发射400 min,发射电流无明显衰减,表明器件场发射性能良好,具有潜在的应用前景。
Abstract
The film-under-gate field emission arrays (FEA) are fabricated on the glass substrates by conventional photolithography, anodic oxidation and stripping method. SnO2 emitters are migrated on the cathode of film-under-gate triode by screen printing. The images of film-under-gate FEA with SnO2 emitters are measured by the optical microscopy and scanning electron microscopy (SEM). The electron trajectory in this triode is simulated by ANSYS. It shows that the SnO2 emitters by screen printing are uniformly distributed on the surface of cathode. The electron beam size gradually becomes small with the increase of anode voltage and gradually becomes large with the increase of gate voltage. The cathode plate and anode plate are made of a 5 inch monochromatic film-under-gate field emission displays (FED) panel and its field emission performance are investigated. It indicates that the FED with SnO2 emitters can achieve full-screen light emission when the gate voltage and anode voltage are 140 V and 2000 V, respectively, at the anode-cathode spacing of 1100 μm. In addition, the maximum anode current of fabricated device can come to 232 μA and the highest luminance is approximately 270 cd/m2. Moreover, the emission current fluctuation is less than 5% for 400 min, which shows that the film-under-gate field emission displays with SnO2 emitters by screen printing have a good field emission characteristics and good application prospects.

张永爱, 林金阳, 吴朝兴, 郭太良. 薄膜后栅型SnO2场发射显示器的制备及性能研究[J]. 光学学报, 2011, 31(3): 0323002. Zhang Yongai, Lin Jinyang, Wu Chaoxing, Guo Tailiang. Fabrication and Characteristics of Film-Under-Gate Field Emission Displays with SnO2 Emitters[J]. Acta Optica Sinica, 2011, 31(3): 0323002.

关于本站 Cookie 的使用提示

中国光学期刊网使用基于 cookie 的技术来更好地为您提供各项服务,点击此处了解我们的隐私策略。 如您需继续使用本网站,请您授权我们使用本地 cookie 来保存部分信息。
全站搜索
您最值得信赖的光电行业旗舰网络服务平台!