光学学报, 2019, 39 (6): 0614002, 网络出版: 2019-06-17
450 nm GaN基半导体激光器腔面反射率的优化 下载: 1423次
Optimization of Facet Reflectivity of 450-nm GaN-Based Semiconductor Lasers
激光器 半导体激光器 GaN 腔面反射率 空间烧孔 lasers semiconductor lasers GaN facet reflectivity longitude spatial hole burning
摘要
分析腔面反射率对GaN基半导体激光器斜率效率和输出功率的影响,并对出射波长为450 nm的激光器进行实验验证。结果表明,对于非对称谐振腔结构,通过优化腔面反射率,可以抑制空间烧孔非线性效应,提高器件的微分量子效率和最大输出功率。当前腔面反射率为5%时,斜率效率大于1.3 W·A
-1,并在3 A的连续工作电流下,获得了2.6 W的高功率输出。
Abstract
We analyze and experimentally verify the impact of facet reflectivity on slope efficiency and output power of 450-nm GaN-based semiconductor lasers. The results reveal that for asymmetric resonator structures, the nonlinear effect of longitude spatial hole burning can be suppressed by optimizing the facet reflectivity, thereby improving the differential quantum efficiency and maximum output power of the device. A high slope efficiency of >1.3 W·A
-1 is obtained at the facet reflectivity of 5%, and a high power output of 2.6 W is obtained at the operating current of 3 A.
杜维川, 康俊杰, 李弋, 谭昊, 周坤, 胡耀, 张亮, 王昭, 郭林辉, 高松信, 武德勇, 唐淳. 450 nm GaN基半导体激光器腔面反射率的优化[J]. 光学学报, 2019, 39(6): 0614002. Weichuan Du, Junjie Kang, Yi Li, Hao Tan, Kun Zhou, Yao Hu, Liang Zhang, Zhao Wang, Linhui Guo, Songxin Gao, Deyong Wu, Chun Tang. Optimization of Facet Reflectivity of 450-nm GaN-Based Semiconductor Lasers[J]. Acta Optica Sinica, 2019, 39(6): 0614002.