合成了绿色发光稀土有机配合物1,10邻菲啰啉三乙酰丙酮合铽(Ⅲ) [Tb(aca)3phen]，通过紫外可见吸收光谱测试材料的吸收特性，其吸收范围主要集中在250~355 nm之间，在296 nm和345 nm处有两个较强的吸收峰。利用345 nm的紫外光激发得到了材料的光致发光光谱，观察到明显的绿色发光, 发光峰位于487，545，585，621 nm，分别对应5D4→7F6，5D4→7F5 ，5D4→7F4，5D4→7F3能级间的电子跃迁。制备了结构为ITO/PEDOTPSS/Tb(aca)3phenPVK/Bphen(x nm)/Al有机电致发光器件。研究了不同厚度的Bphen修饰层对器件性能的影响，当Bphen厚度为5 nm时器件发光特性最优，说明5 nm Bphen层可有效地阻挡空穴，提高了载流子的复合几率。当器件外加驱动电压为20 V时，发光强度是没有Bphen修饰层的器件的2.4倍。

Rare earth complex Tb(aca)3phen is synthesized and characterized by ultraviolet-visible absorption spectrum, and the absorption range is mainly from 250 nm to 355 nm, which has two absorption peaks located at 296 nm and 345 nm. The photoluminescence spectra of the material show bright green emission under the excitation of 345 nm light and four emission peaks are located at 487, 545, 585, 621 nm, which correspond to the 5D4→7F6, 5D4→7F5 , 5D4→7F4, 5D4→7F3 electron transitions. A series of organic light emitting diodes (OLEDs) based on Tb(aca)3phen as emission layer are fabricated, the devices′ structure is ITO/PEDOTPSS/Tb(aca)3phenPVK/Bphen(x nm)/Al. The effect of Bphen layer thickness on the performance of OLEDs is investigated. The recombination of hole and electrons can be increased when the thickness of Bphen is about 5 nm. The luminescent power of OLEDs is 2.4 times as large as that of OLEDs without Bphen buffer layer under 20 V driving voltage.