采用数字微镜器件(DMD)无掩模光刻技术,以飞秒激光为光源,结合大面积拼接的方法快速制备了具有较高分辨率和毫米尺寸的大面积微纳结构。提出以单子场投影线扫描的方式进一步改善由于光场能量分布不均匀引起的结构边缘粗糙的问题,极大地降低了线条的边缘粗糙度,有效地控制了结构的精度。本研究以半导体领域常用的正性光刻胶为主要研究对象,实现了面积为7.4 mm 2的1 μm等间距线阵列和面积为38.7 mm 2的10 μm等间距线阵列结构的快速制备。本研究为大面积微纳结构制备提供了一种新方法,所制备结构可应用于气液流动、药物输运及晶体生长等领域。

In this study, a digital micromirror device (DMD) maskless lithography technique, combined with femtosecond laser source and large-area splicing method, was used to rapidly fabricate a large-area micro/nanostructure with high resolution and millimeter size. Moreover, the edge roughness of the structure introduced by the uneven distribution of the light field energy is improved by single optical field line scanning. This would greatly decrease the edge roughness of the line and effectively control the accuracy of the structure. In this study, positive photoresist commonly used in the semiconductor field was the main research object, and the rapid fabrications of 1 μm equidistant line arrays with an area of 7.4 mm ² and 10 μm equidistant line arrays with an area of 38.7 mm ² were achieved. This study provides a new method for the fabrication of large-area micro/nanostructures which can be applied in the fields of gas-liquid flow, drug transport, and crystal growth.