Chinese Optics Letters, 2016, 14 (5): 052301, Published Online: Aug. 6, 2018
Graphene field effect transistor-based terahertz modulator with small operating voltage and low insertion loss Download: 952次
230.4110 Modulators 300.6495 Spectroscopy, teraherz 160.4236 Nanomaterials 310.6845 Thin film devices and applications
Abstract
In this work, we report a broadband terahertz wave modulator based on a top-gate graphene field effect transistor with polyimide as the gate dielectric on a PET substrate. The transmission of the terahertz wave is modulated by controlling the Fermi level of graphene via the polyimide as the top-gate dielectric material instead of the traditional dielectric materials. It is found that the terahertz modulator can achieve a modulation depth of ~ 20.9 % with a small operating gate voltage of 3.5 V and a low insertion loss of 2.1 dB.
Jingbo Liu, Pingjian Li, Yuanfu Chen, Xinbo Song, Fei Qi, Binjie Zheng, Jiarui He, Qiye Wen, Wanli Zhang. Graphene field effect transistor-based terahertz modulator with small operating voltage and low insertion loss[J]. Chinese Optics Letters, 2016, 14(5): 052301.