Chinese Optics Letters, 2016, 14 (6): 062502, Published Online: Aug. 3, 2018
Effectiveness of inserting an InGaN interlayer to improve the performances of InGaN-based blue-violet laser diodes Download: 621次
Abstract
Electron leakage still needs to be solved for InGaN-based blue-violet laser diodes (LDs), despite the presence of the electron blocking layer (EBL). To reduce further electron leakage, a new structure of InGaN-based LDs with an InGaN interlayer between the EBL and p -type waveguide layer is designed. The optical and electrical characteristics of these LDs are simulated, and it is found that the adjusted energy band profile in the new structure can improve carrier injection and enhance the effective energy barrier against electron leakage when the In composition of the InGaN interlayer is properly chosen. As a result, the device performances of the LDs are improved.
Xiang Li, Degang Zhao. Effectiveness of inserting an InGaN interlayer to improve the performances of InGaN-based blue-violet laser diodes[J]. Chinese Optics Letters, 2016, 14(6): 062502.