采用微波等离子体气相沉积(MPCVD)在商用3 mm×3 mm×1 mm高温高压合成(HPHT)Ib型(100) 金刚石衬底上同质外延生长B掺杂金刚石薄膜，并在此材料的基础上用磁控溅射和电子束蒸镀技术制备了不同结构参数金刚石肖特基势垒二极管。测试结果表明：所生长的金刚石薄膜表面非常平整，可以看到比较明显的原子台阶；所制备的器件具有明显的整流特性，肖特基电极直径100 μm，肖特基电极和欧姆电极间距10 μm，外加电压-15 V，300 K时测得器件正向导通电阻20 Ω，反向饱和电流近似为10-6 A，反向击穿电压大约103.5 V；电极间距越大，反向击穿电压越高, 器件正向电流越小。

Boron-doped diamond thin films are homoepitaxially grown on 3 mm×3 mm×1 mm commercial Ib(100) diamond substrate with high temperature and high pressure(HPHT) by microwave plasma chemical vapor deposition(MPCVD). The magnetron sputtering and electron beam evaporation techniques are used to prepare the diamond Schottky diodes with different structural parameters. The test results indicate that the surface of the growed diamond thin films are very smooth and obvious atomic steps can be observed. The device has obvious rectifier features. The forward conduction resistance of the device is 20 Ω at 300 K when the diameter of Schottky electrode is 100 μm, the distance between the Schottky electrode and ohm electrode is 10 μm and the applied voltage is -15 V. The reverse saturation current is about 10-6 A and the reverse breakdown voltage is about 103.5 V. The greater the distance between the Schottky electrodes and ohm electrode is, the higher the reverse breakdown voltage is and the smaller the forward current is.