Chinese Optics Letters, 2016, 14 (8): 083401, Published Online: Aug. 3, 2018
Interface characterization of Mo/Si multilayers Download: 981次
Abstract
Complementary analysis techniques are applied in this work to study the interface structure of Mo/Si multilayers. The samples are characterized by grazing incident x-ray reflectivity, x-ray photoelectron spectroscopy, high-resolution transmission electron microscopy, and extreme ultraviolet reflectivity. The results indicate that the layer thickness is controlled well with small diffusion on the interface by forming MoSi 2 . Considering MoSi 2 as the interface composition, simulating the result of our four-layer model fits well with the measured reflectivity curve at 13.5 nm.
Jiaoling Zhao, Hongbo He, Hu Wang, Kui Yi, Bin Wang, Yun Cui. Interface characterization of Mo/Si multilayers[J]. Chinese Optics Letters, 2016, 14(8): 083401.