光学学报, 2016, 36 (9): 0914002, 网络出版: 2016-09-09
非晶硅太阳能电池高速激光划线实验研究
Research on High-Speed Laser Scribing of Amorphous Silicon Solar Cell
激光技术 激光划线 非晶硅太阳能电池 划线表面微观形貌 开路电压 填充因子 laser technique laser scribing amorphous silicon solar cell scribing surface morphology open-circuit voltage filling factor
摘要
用波长为532 nm的调Q倍频激光器作为光源,对非晶硅太阳能电池板进行高速激光划线实验。通过原子力显微镜对不同激光扫描速度下划线蚀刻深度、热影响区尺寸、切口倾角以及线能量密度等进行测量,分析了划线效果对电池效率的影响。结果表明,当扫描速度为0.3 m/s时,划线效果较理想。
Abstract
With Q-switched frequency-doubled laser at the wavelength of 532 nm as light source, the experiment of high speed laser scribing on amorphous silicon solar cell panels is conducted. By atomic force microscope, the scribing kerf depth, heat-affected zone dimension, kerf angle, and line energy density are measured, and the influence of scribing result on the solar cell efficiency is analyzed. The results show that the scribing result is ideal at the scribing speed of 0.3 m/s.
吴超, 唐霞辉, 秦应雄, 王炜, 王振. 非晶硅太阳能电池高速激光划线实验研究[J]. 光学学报, 2016, 36(9): 0914002. Wu Chao, Tang Xiahui, Qin Yingxiong, Wang Wei, Wang Zhen. Research on High-Speed Laser Scribing of Amorphous Silicon Solar Cell[J]. Acta Optica Sinica, 2016, 36(9): 0914002.