This paper summarizes our research work on optoelectronic devices with nanostructures. It was indicated that by manipulating so called “general energybands” of fundamental particles or quasi-particles, such as photon, phonon, and surface plasmon polariton (SPP), novel optoelectronic characteristics can be obtained, which results in a series of new functional devices. A silicon based optical switch with an extremely broadband of 24 nm and an ultra-compact (8 μm × 17.6 μm) footprint was demonstrated with a photonic crystal slow light waveguides. By proposing a nanobeam based hetero optomechanical crystal, a high phonon frequency of 5.66 GHz was realized experimentally. Also, we observed and verified a novel effect of two-surface-plasmon-absorption (TSPA), and realized diffraction-limit-overcoming photolithography with resolution of ~1/11 of the exposure wavelength.

This paper summarizes our research work on optoelectronic devices with nanostructures. It was indicated that by manipulating so called “general energybands” of fundamental particles or quasi-particles, such as photon, phonon, and surface plasmon polariton (SPP), novel optoelectronic characteristics can be obtained, which results in a series of new functional devices. A silicon based optical switch with an extremely broadband of 24 nm and an ultra-compact (8 μm × 17.6 μm) footprint was demonstrated with a photonic crystal slow light waveguides. By proposing a nanobeam based hetero optomechanical crystal, a high phonon frequency of 5.66 GHz was realized experimentally. Also, we observed and verified a novel effect of two-surface-plasmon-absorption (TSPA), and realized diffraction-limit-overcoming photolithography with resolution of ~1/11 of the exposure wavelength.Prof. Huang authored/co-authored more than 300 journal and conference papers. She is a senior member of the IEEE.