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Performance improvement by enhancing the well-barrier hole burning in a quantum well semiconductor optical amplifier

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Abstract

In this paper, we demonstrated a novel physical mechanism based on the well-barrier hole burning enhancement in a quantum well (QW) semiconductor optical amplifier (SOA) to improve the operation performance. To completely characterize the physical mechanism, a complicated theoretical model by combining QW band structure calculation with SOA’s dynamic model was constructed, in which the carrier transport, interband effects and intraband effects were all taken into account. The simulated results showed optimizing the thickness of the separate confinement heterostructure (SCH) layer can effectively enhance the well-barrier hole burning, further enhance the nonlinear effects in SOA and reduce the carrier recovery time. At the optimal thickness, the SCH layer can store enough carrier numbers, and simultaneously the stored carriers can also be fast and effectively injected into the QWs.Wuhan, China. His current research interests include all optical signal processing based on semiconductor optical amplifier.

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DOI:10.1007/s12200-016-0598-z

所属栏目:RESEARCH ARTICLE

基金项目:This work was supported by the National Basic Research Program of China (No. 2011CB301704), the National Natural Science Found for Distinguished Yong Scholars (No. 61125501), the National Natural Science Foundation of China (NSFC) Major International Joint Research Project (Grant No. 61320106016) and Scientific and Technological Innovation Cross Team of Chinese Academy of Sciences.

收稿日期:2016-01-07

修改稿日期:2016-06-15

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作者单位    点击查看

Tong CAO:Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information,Huazhong University of Science and Technology, Wuhan 430074, China
Xinliang ZHANG:Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information,Huazhong University of Science and Technology, Wuhan 430074, China

联系人作者:Xinliang ZHANG(xlzhang@mail.hust.edu.cn)

备注:Tong Cao is currently working toward the Ph.D. degree at the Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology,

【1】Durhuus T, Mikkelsen B, Joergensen C, Lykke Danielsen S, Stubkjaer K E. All-optical wavelength conversion by semiconductor optical amplifiers. Journal of Lightwave Technology, 1996, 14(6): 942–954

【2】Liu Y, Tangdiongga E, Li Z, de Waardt H, Koonen A M J, Khoe G D, Shu X, Bennion I, Dorren H J S. Error-free 320-Gb/s all-optical wavelength conversion using a single semiconductor optical amplifier. Journal of Lightwave Technology, 2007, 25(1): 103–108

【3】Krzczanowicz L, Connelly M J. 40 Gb/s NRZ-DQPSK data alloptical wavelength conversion using four wave mixing in a bulk SOA. IEEE Photonics Technology Letters, 2013, 25(24): 2439– 2441

【4】Stubkjaer K E. Semiconductor optical amplifier-based all-optical gates for high-speed optical processing. IEEE Journal of Selected Topics in Quantum Electronics, 2000, 6(6): 1428–1435

【5】Dong J, Zhang X, Fu S, Xu J, Shum P, Huang D. Ultrafast all-optical signal processing based on single semiconductor optical amplifier and optical filtering. IEEE Journal of Selected Topics in Quantum Electronics, 2008, 14(3): 770–778

【6】Xu J, Zhang X, Zhang Y, Dong J, Liu D, Huang D. Reconfigurable all-optical logic gates for multi-input differential phase-shift keying signals: design and experiments. Journal of Lightwave Technology, 2009, 27(23): 5268–5275

【7】Lee C G, Kim Y J, Park C S, Lee H J, Park C. Experimental demonstration of 10-Gb/s data format conversions between NRZ and RZ using SOA-loop-mirror. Journal of Lightwave Technology, 2005, 23(2): 834–841

【8】Dong J, Zhang X, Xu J, Huang D, Fu S, Shum P. 40 Gb/s all-optical NRZ to RZ format conversion using single SOA assisted by optical bandpass filter. Optics Express, 2007, 15(6): 2907–2914

【9】Banchi L, Presi M, D''Errico A, Contestabile G, Ciaramella E. Alloptical 10 and 40 Gbit/s RZ-to-NRZ format and wavelength conversion using semiconductor optical amplifiers. Journal of Lightwave Technology, 2010, 28(1): 32–38

【10】Yu Y, Wu W, Huang X, Zou B, Hu S, Zhang X. Multichannel alloptical RZ-PSK amplitude regeneration based on the XPM effect in a single SOA. Journal of Lightwave Technology, 2012, 30(23): 3633–3639

【11】Porzi C, Serafino G, Bogoni A, Contestabile G. Phase-preserving amplitude noise compression of 40 Gb/s DPSK signals in a single SOA. Journal of Lightwave Technology, 2014, 32(10): 1966–1972

【12】Cao T, Chen L, Yu Y, Zhang X. Experimental demonstration and devices optimization of NRZ-DPSK amplitude regeneration scheme based on SOAs. Optics Express, 2014, 22(26): 32138–32149

【13】Yu J, Jeppesen P. Improvement of cascaded semiconductor optical amplifier gates by using holding light injection. Journal of Lightwave Technology, 2001, 19(5): 614–623

【14】Pleumeekers J L, Kauer M, Dreyer K, Burrus C, Dentai A G, Shunk S, Leuthold J, Joyner C H. Acceleration of gain recovery in semiconductor optical amplifiers by optical injection near transparency wavelength. IEEE Photonics Technology Letters, 2002, 14(1): 12–14

【15】Dupertuis M A, Pleumeekers J L, Hessler T P, Selbmann P E, Deveaud B, Dagens B, Emery J Y. Extremely fast high-gain and low-current SOA by optical speed-up at transparency. IEEE Photonics Technology Letters, 2000, 12(11): 1453–1455

【16】Kumar Y, Shenoy M R. A novel scheme of optical injection for fast gain recovery in semiconductor optical amplifier. IEEE Photonics Technology Letters, 2014, 26(9): 933–936

【17】Nielsen M L, M?rk J. Increasing the modulation bandwidth of semiconductor-optical-amplifier-based switches by using optical filtering. Journal of the Optical Society of America B, Optical Physics, 2004, 21(9): 1606–1619

【18】Liu Y, Tangdiongga E, Li Z, Zhang S, Waardt H D, Khoe G D, Dorren H J S. Error-free all-optical wavelength conversion at 160 Gb/s using a semiconductor optical amplifier and an optical bandpass filter. Journal of Lightwave Technology, 2006, 24(1): 230–236

【19】Zhang L, Kang I, Bhardwaj A, Sauer N, Cabot S, Jaques J, Neilson D T. Reduced recovery time semiconductor optical amplifier using p-type-doped multiple quantum wells. IEEE Photonics Technology Letters, 2006, 18(22): 2323–2325

【20】Qin C, Huang X, Zhang X. Gain recovery acceleration by enhancing differential gain in quantum well semiconductor optical amplifiers. IEEE Journal of Quantum Electronics, 2011, 47(11): 1443–1450

【21】Qin C, Huang X, Zhang X. Theoretical investigation on gain recovery dynamics in step quantum well semiconductor optical amplifiers. Journal of the Optical Society of America B, Optical Physics, 2012, 29(4): 607–613

【22】Huang X, Qin C, Yu Y, Zhang X. Acceleration of carrier recovery in a quantum well semiconductor optical amplifier due to the tunneling effect. Journal of the Optical Society of America B, Optical Physics, 2012, 29(10): 2990–2994

【23】Matsuura M, Raz O, Gomez-Agis F, Calabretta N, Dorren H J S. Ultrahigh-speed and widely tunable wavelength conversion based on cross-gain modulation in a quantum-dot semiconductor optical amplifier. Optics Express, 2011, 19(26): B551–B559

【24】Rideout W, Sharfin W F, Koteles E S, Vassell M O, Elman B. Wellbarrier hole burning in quantum well lasers. IEEE Photonics Technology Letters, 1991, 3(9): 784–786

【25】Kersting R, Schwedler R, Wolter K, Leo K, Kurz H. Dynamics of carrier transport and carrier capture in In1-xGaxAs/InP heterostructures. Physical Review B: Condensed Matter and Materials Physics, 1992, 46(3): 1639–1648

【26】Lysak V V, Kawaguchi H, Sukhoivanov I A, Katayama T, Shulika A V. Ultrafast gain dynamics in asymmetrical multiple quantumwell semiconductor optical amplifiers. IEEE Journal of Quantum Electronics, 2005, 41(6): 797–807

【27】Xia F, Wei J, Menon V, Forrest S R. Monolithic integration of a semiconductor optical amplifier and a high bandwidth p-i-n photodiode using asymmetric twin-waveguide technology. IEEE Photonics Technology Letters, 2003, 15(3): 452–454

【28】Nagarajan R, Ishikawa M, Fukushima T, Geels R S, Bowers J E. High speed quantum-well lasers and carrier transport effects. IEEE Journal of Quantum Electronics, 1992, 28(10): 1990–2008

【29】Tsai C Y, Tsai C Y, Lo Y, Spencer R M, Eastman L F. Nonlinear gain coefficients in semiconductor quantum-well lasers: effects of carrier diffusion, capture, and escape. IEEE Journal of Selected Topics in Quantum Electronics, 1995, 1(2): 316–330

【30】Agrawal G P, Olsson N A. Self-phase modulation and spectral broadening of optical pulses in semiconductor laser amplifiers. IEEE Journal of Quantum Electronics, 18989, 25(11): 2297–2306

【31】Dailey J M, Koch T L. Simple rules for optimizing asymmetries in SOA-based Mach-Zehnder wavelength converters. Journal of Lightwave Technology, 2009, 27(11): 1480–1488

【32】Bennett B R, Soref R A, Alamo J A. Carrier-induced change in refractive index of InP, GaAs and InGaAsP. IEEE Journal of Quantum Electronics, 1990, 26(1): 113–122

【33】Chang C, Chuang S. Modeling of strained quantum-well lasers with spin-orbit coupling. IEEE Journal of Selected Topics in Quantum Electronics, 1995, 1(2): 218–229

引用该论文

Tong CAO,Xinliang ZHANG. Performance improvement by enhancing the well-barrier hole burning in a quantum well semiconductor optical amplifier[J]. Frontiers of Optoelectronics, 2016, 9(3): 353-361

Tong CAO,Xinliang ZHANG. Performance improvement by enhancing the well-barrier hole burning in a quantum well semiconductor optical amplifier[J]. Frontiers of Optoelectronics, 2016, 9(3): 353-361

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